Abstract
A superjunction (SJ) insulated gate bipolar transistor (IGBT) featuring an embedded self-biased (ESB) n-type metal–oxide–semiconductor field-effect transistor (NMOS) between the P-pillar and the emitter is proposed and simulated. During the on-state, the NMOS is turned off to maintain high conductivity modulation, achieving a relatively low on-state voltage (Von). The P-pillar is connected to the emitter through the NMOS in the blocking state, which prevents premature breakdown at the corner of the trench gate. Consequently, a high breakdown voltage (BV) is ensured. During the turn-off period, the embedded self-biased NMOS turns on adaptively with the increasing potential of the P-pillar. An extra path is formed to extract excessive carriers in the drift region, thereby minimizing turn-off losses (Eoff). Numerical simulations show that a 48.9% reduction in Von is achieved for the proposed IGBT when compared with the conventional (Con.) SJ IGBT at the same Eoff. Furthermore, the Eoff of the proposed IGBT is reduced by 23.8% and the BV is improved by 21.5% compared to the SJ IGBT with a floating P-pillar (FP SJ IGBT) at the same Von.
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References
M. Kitagawa, I. Omura, S. Hasegawa, T. Inoue, A. Nakagawa, A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor, in Proceedings of IEEE International Electron Devices Meeting, 679 (1993)
H. Takahashi, H. Haruguchi, H. Hagino and T. Yamada, Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application. in, International Symposium on Power Semiconductor Devices and ICs (ISPSD), 349 (1996)
T. Laska, M. Munzer, F. Pfirsch, C. Schaeffer and T. Schmidt, The field stop IGBT (FS IGBT). A new power device concept with a great improvement potential, in International Symposium on Power Semiconductor Devices and ICs (ISPSD), 355 (2000)
Z. Wang, H. Zhang, and J.B. Kuo, Turn-OFF transient analysis of superjunction IGBT. IEEE Trans. Electron Devices 66, 991 (2019).
M. Antoniou, F. Udrea, F. Bauer and I. Nistor, A new way to alleviate the RC IGBT snapback phenomenon: the super junction solution, in International Symposium on Power Semiconductor Devices and IC's (ISPSD), 153 (2010)
M. Antoniou, F. Udrea, F. Bauer, and I. Nistor, The soft punchthrough+ superjunction insulated gate bipolar transistor: a high speed structure with enhanced electron injection. IEEE Trans. Electron Devices 58, 769 (2011).
K.-H. Oh, J. Lee, K.-H. Lee, Y.C. Kim, and C. Yun, A simulation study on novel field stop IGBTs using superjunction. IEEE Trans. Electron Devices 53, 884 (2006).
M. Antoniou, F. Udrea, F. Bauer, and I. Nistor, The semi-superjunction IGBT. IEEE Electron Device Lett. 31, 591 (2010).
M. Huang, B. Gao, Z. Yang, L. Lai, and M. Gong, A carrier-storage-enhanced superjunction IGBT with ultralow loss and on-state voltage. IEEE Electron Device Lett. 39, 264 (2018).
J. Huang, H. Huang, and X.B. Chen, Simulation study of a low ON-state voltage superjunction IGBT with self-biased PMOS. IEEE Trans. Electron Devices 66, 3242 (2019).
M. Hu, M. Huang, R. Li, Y. Ma, Z. Yang, Y. Li, and M. Gong, Semi-superjunction IGBT with a relatively high-resistance p-top region for low on-state and turn-off losses. Superlattice Microst. 158, 107025 (2021).
X.B. Chen, P.A. Mawby, K. Board, and C.A.T. Salama, Theory of a novel voltage-sustaining layer for power devices. Microelectron. J. 29, 1005 (1998).
M. Antoniou, F. Udrea, and F. Bauer, The superjunction insulated gate bipolar transistor optimization and modeling. IEEE Trans. Electron Devices 58, 769 (2009).
M. Antoniou, F. Udrea, F. Bauer, Optimisation of superjunction bipolar transistor for ultra-fast switching applications, in IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 101 (2007)
L. M. Selgi and L. Fragapane, Experimental evaluation of a 600 V super-junction planar PT IGBT prototype—Comparison with planar PT and trench gate PT technologies, in European Conference on Power Electronics and Applications (EPE), 1 (2013)
K. H. Oh, J. Kim, H. Seo, J. Jung, E. Kim, S. S. Kim and C. Yun, Experimental investigation of 650V superjunction IGBTs, in International Symposium on Power Semiconductor Devices and ICs (ISPSD), 299 (2016)
Acknowledgements
This work was supported in part by the Hunan Provincial Natural Science Foundation of China under Grant 2021JJ30738, in part by the Scientific Research Fund of Hunan Provincial Education Department under Grant 19K001, and in part by the Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering’s Open Fund Project-2020 under Grant 202016.
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Wu, L., Zhang, B., Deng, G. et al. A Superjunction Insulated Gate Bipolar Transistor with Embedded Self-biased N-Type Metal–Oxide–Semiconductor Field-Effect Transistor. J. Electron. Mater. 52, 2177–2184 (2023). https://doi.org/10.1007/s11664-022-10148-1
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DOI: https://doi.org/10.1007/s11664-022-10148-1