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Evaluation of the crystallization kinetic parameters in terms of the sheet resistance of amorphous As30Te60Ga10 films

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Abstract

The sheet resistance (Rs), and hence electrical resistivity of different thicknesses (200–320 nm) of As30Te60Ga10 films was measured from 490 to 600 K. Crystallization kinetics parameters of the As30Te60Ga10 films were determined in terms of the evaluated Rs for various film thicknesses. The investigated kinetics parameters were compared to obtained experimental data from differential scanning calorimetry as well as were confirmed by the X-ray diffraction and scanning electron microscope. It was found that the exothermic heat flow can be obtained from the measured surface resistance, with high accuracy, for all As30Te60Ga10 films. The crystallization kinetic parameters of As30Te60Ga10 films were determined under non-isothermal and isoconversional conditions. Besides, the activation energy required for the amorphous-crystalline transition of As30Te60Ga10 was estimated and various models of the crystallization kinetics were applied. It was observed that the Šesták-Berggren equation is more appropriate, compared to the Johnson–Mehl–Avrami equation, for describing the kinetics of crystallization in As30Te60Ga10. The obtained results could give an experimental basis for the optimization of phase-change memory in the As–Te–Ga system in terms of the sheet resistance measurement and the possibility of its application for various phase-change materials.

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Acknowledgements

Dr. R. M. Hassan would like to thank Dr. Ammar Qasem (Physics Department, Faculty of Science, Al-Azhar University, Nasr City 11884, Cairo) for his help.

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Authors and Affiliations

  1. Physics Department, Faculty of Science, Assiut University, Assiut, 71516, Egypt

    Alaa M. Abd-Elnaiem

  2. Sphinx University, New Assiut City, Assiut, Egypt

    Alaa M. Abd-Elnaiem

  3. Physics Department, Faculty of Education-Zingiber, Abyan University, Abyan, Yemen

    Rashed M. Hassan

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Abd-Elnaiem, A.M., Hassan, R.M. Evaluation of the crystallization kinetic parameters in terms of the sheet resistance of amorphous As30Te60Ga10 films. Appl. Phys. A 127, 919 (2021). https://doi.org/10.1007/s00339-021-05083-7

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