Abstract
SnSx thin films were deposited on glass substrates by sol–gel spin coating technique. The effects of various annealing ambients such as air, O2, Ar and N2 on structural, morphological, optical and electrical properties of thin films were investigated. X-Ray diffraction (XRD) results showed that the annealed sample in the air has the tetragonal SnO2 phase, while by annealing of the sample in O2, Ar and N2 the hexagonal SnS2 and the orthorhombic SnS structures were formed and the SnS to other phase fraction increased by Ar annealing. Field emission scanning electron microscopy (FESEM) images displayed that the film surface is constituted by homogeneously distributed nanograins and Ar annealing enhances the particle size. Transmittance spectra indicated that Ar and N2 annealing remarkably reduced the transparency of films and led to redshift of the optical absorption edge so that the band gap reduced from 3.69 in air-annealed films to 2.42 in N2-annealed films. The optical constants of thin films were estimated by envelope method. The PL spectra of air- and O2-annealed thin films exhibited the blue emission, while the N2 and Ar annealing causes green emission. Hall effect measurements revealed that the annealing of films in N2 leads to highest mobility compared to the other samples, whereas the carrier concentration and conductivity of SnSx thin films show the best electrical results which has been annealed in Ar ambient.
Similar content being viewed by others
Data availability
All data can be presented on request.
References:
P.R. Bommireddy, C.S. Musalikunta, C. Uppala, S.H. Park, Mater. Sci. Semicond. Process. 71, 139 (2017)
V.R.M. Reddy, S. Gedi, C. Park, R.W. Miles, K.T.R. Reddy, Curr. Appl. Phys. 15, 588 (2015)
C. Rana, S. Saha, J. Mater. Sci.: Mater. Electron. 30, 21160 (2019)
C. Xia, X. Zhao, Y. Peng, H. Zhang, S. Wei, Y. Jia, Superlattices Microstruct. 85, 664 (2015)
A. Voznyi, V. Kosyak, A. Opanasyuk, N. Tirkusova, L. Grase, A. Medvids, G. Mezinskis, Mater. Chem. Phys. 173, 52 (2016)
T.H. Sajeesh, K.B. Jinesh, C.S. Kartha, K.P. Vijayakumar, Appl. Surf. Sci. 258, 6870 (2012)
M. Ichimura, K. Takeuchi, Y. Ono, E. Arai, Thin Solid Films 361, 98 (2000)
P. Sinsermsuksakul, K. Hartman, S.B. Kim, J. Heo, L. Sun, H.H. Park, R. Chakraborty, T. Buonassisi, R.G. Gordon, Appl. Phys. Lett. 102, 053901 (2013)
U. Chalapathi, B. Poornaprakash, S.H. Park, Superlattices Microstruct. 103, 221 (2017)
M.G. Sousa, A.F. Da Cunha, P.A. Fernandes, J. Alloy. Compd. 592, 80 (2014)
C.C. Huang, Y.J. Lin, C.Y. Chuang, C.J. Liu, Y.W. Yang, J. Alloy. Compd. 553, 208 (2013)
J. Sun, Y. Huang, S. Nie, Z. Chen, J. Xu, L. Zhao, W. Zhou, Q. Wang, H. Gong, Mater. Lett. 178, 231 (2016)
B.D. Cullity, S.R. Stock, Elements of X-Ray Diffraction, Third Edition. (Prentice-Hall, New York, 2001).
P.P. Hankare, P.A. Chate, D.J. Sathe, P.A. Chavan, V.M. Bhuse, J. Mater. Sci.: Mater. Electron. 20, 374 (2009)
A. Diéguez, A. Romano-Rodríguez, J.R. Morante, U. Weimar, W. Göpel, Sens. Actuators B: Chem. 31, 1–8 (1996)
B.P. Reddy, M.C. Sekhar, S.V.P. Vattikuti, Y. Suh, S.-H. Park, Mater. Res. Bull. 103, 13 (2018)
V. Govindan, L. Kashinath, D.J. Daniel, K. Sankaranarayanan, J. Mater. Sci.: Mater. Electron. 30, 7963 (2019)
M.N. Amroun, M. Khadraoui, Optik 184, 16 (2019)
W. Zhao, Z. Wei, L. Zhang, X. Wu, X. Wang, Mater. Sci. Semicond. Process. 88, 173 (2018)
H. Chen, L. Ding, W. Sun, Q. Jiang, J. Hu, J. Li, RSC Adv 5, 56401 (2015)
F.E. Ghodsi, J. Mazloom, Appl. Phys. A 108, 693 (2012)
N. Lavanya, C. Sekar, J. Electroanal. Chem. 840, 1 (2019)
R. Swanepoel, J. Phys. E: Sci. Instrum. 16, 1214 (1983)
J.C. Tauc, Optical Properties of Solids (North-Holland, Amsterdam, 1972).
J.C. Manifacier, J. Gasiot, J.P. Fillard, J. Phys. E: Sci. Instrum. 9, 1002 (1976)
X.N. Zhai, C.Q. Liu, N. Wang, T.T. Lun, M.S. Song, Q. Ge, H.L. Wang, Mater. Res. Express 6, 126458 (2020)
B.P. Reddy, M.C. Sekhar, S.P. Vattikuti, Y. Suh, S.H. Park, Mater. Res. Bull. 103, 13 (2018)
T.J. Coutts, D.L. Young, X. Li, MRS Bull. 25, 58 (2000)
K.L. Chopra, S. Major, D.K. Pandya, Thin Solid Films 102, 1 (1983)
Y.X. Guo, P. Wu, W.J. Cheng, J. Mater. Sci.: Mater. Electron. 26, 4922 (2015)
A. Salehi, F.E. Ghodsi, J. Mazloom, S. Ebrahimi-Koodehi, Appl. Phys. A 124, 661 (2018)
A. Singhal, B. Sanyal, A.K. Tyagi, RSC Adv. 1, 903 (2011)
J. Mazloom, F.E. Ghodsi, Mater. Res. Bull. 48, 1468 (2013)
J. Mazloom, F.E. Ghodsi, M. Gholami, J. Alloy. Compd. 579, 384 (2013)
Acknowledgements
The authors gratefully acknowledge the University of Guilan Research Council for the support of this work.
Author information
Authors and Affiliations
Contributions
FHM was involved in conceptualization, methodology, investigation and writing—original draft. FEG was involved in supervision, conceptualization, methodology, validation and writing—review and editing. JM was involved in methodology, validation, writing and review.
Corresponding author
Ethics declarations
Conflict of interest
The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper. In addition, all of the sections are relevant to our manuscript.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Mohazzab, F.H., Ghodsi, F.E. & Mazloom, J. Crystalline phase change and improvement in electro-optical parameters of SnSx thin films by different ambients. Appl. Phys. A 127, 478 (2021). https://doi.org/10.1007/s00339-021-04622-6
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s00339-021-04622-6