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Statistical analysis of current–voltage characteristics in Au/Ta2O5/n-GaN Schottky barrier heterojunction using different methods

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Abstract

We report on the influence of incorporation of Ta2O5 thin film at the interface of Au/GaN by means of e-beam evaporation technique. The fabricated Au/Ta2O5/n-GaN MIS junctions have been analysed using I–V measurements and were extended to a voltage range of ± 20 V. The Schottky diode parameters for instance Φbo, n and RS values are evaluated using I–V curves at room temperature. The statistical distribution analysis provides the mean ‘Φbo’ value of 0.85 eV with deviation of 0.00181 eV and mean value from ‘n’ is 1.36 with a normal deviation of 0.00562. Two important electrical parameters such as RS and Rsh values are also extracted from I–V characteristics. Furthermore, Cheung, Norde, modified Norde, Hernandez and Chattopadhyay methods are used to evaluate the Schottky barrier parameters from I–V data. The comparison is made between the extracted electrical parameters such as n, Φbo and RS from I–V characteristics of Au/Ta2O5/n-GaN MIS junctions and are in well agreement with each other. Under forward-bias, the fabricated Au/Ta2O5/n-GaN MIS junction conduction mechanisms such as ohmic and SCL were found to be dominant at lower and higher voltage regimes, respectively. By fitting reverse-bias region of I–V curves, PF conduction mechanism was found to be dominant at the interfaces of Au/Ta2O5/n-GaN. In conclusion, the obtained superior rectification ratio of 6.06 × 104 and higher SBH of 0.87 eV was ascribed to the purposefully deposited undoped GaN buffer layer between epitaxial GaN and sapphire substrate.

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Acknowledgements

The author Dr. Nallabala Nanda Kumar Reddy thankfully acknowledge the financial support received from the Department of Science and Technology (DST), Science and Engineering Research Board, Government of India, Major Research Project No. ECR/2017/002868 and DST-FIST Program-2015 (SR/FST/College-263). Dr. C. Yuvaraj acknowledges the financial support received from TEQIP-II seed grant 2019-20. Dr. K. Venkata Krishnaiah is obliged to SERB-DST, New Delhi for sanctioning a major research project No. EMR/2017/000009. Further, all the authors thankful to the technical support received from Mr. G. Manjunatha, MITS, Madanapalle, A.P and Mr. Kewal Krishan, Department of Electronic Science, Kurukshetra University, India.

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Authors and Affiliations

  1. Department of Physics, Sri Padmavati Mahila Visvavidyalayam, Tirupati, Andhra Pradesh, 517502, India

    V. Manjunath

  2. Department of Physics, Madanapalle Institute of Technology and Science, Madanapalle, Andhra Pradesh, 517325, India

    Nanda Kumar Reddy Nallabala

  3. Department of Mechanical Engineering, Madanapalle Institute of Technology & Science, Madanapalle, Andhra Pradesh, 517325, India

    C. Yuvaraj

  4. Department of Chemistry, Madanapalle Institute of Technology and Science, Madanapalle, Andhra Pradesh, 517325, India

    Chandramohan Kukkambakam

  5. Department of Physics, Rajeev Gandhi Memorial College of Engineering and Technology, Nandyal, 518501, Andhra Pradesh, India

    Venkata Krishnaiah Kummara

  6. Department of Electronic Science, Kurukshetra University, Kurukshetra, 136119, India

    Suresh Kumar & Shivani Sharma

  7. Department of Physics, Sri Krishnadevaraya University, Anantapur, Andhra Pradesh, India

    M. V. Lakshmaiah

  8. School of Chemical Engineering, Yeungnam University, Gyeongsan, 38541, Republic of Korea

    Vasudeva Reddy Minnam Reddy

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Manjunath, V., Nallabala, N.K., Yuvaraj, C. et al. Statistical analysis of current–voltage characteristics in Au/Ta2O5/n-GaN Schottky barrier heterojunction using different methods. Appl. Phys. A 127, 46 (2021). https://doi.org/10.1007/s00339-020-04173-2

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