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High-insulating β-Ga2O3 thin films by doping with a valence controllable Fe element

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Abstract

Owing a much higher breakdown field (8 MV/cm) and Baliga’s figure-of-merit (3444) than other hot wide bandgap semiconductor materials such as 4H-SiC and GaN, β-Ga2O3 is regarded as a new promising candidate for high-power electronic applications. The highest electrical breakdown strength (3.8 MV/cm) of metal–oxide–semiconductor field-effect transistors (MOSFET) is demonstrated by the Air Force Research Laboratory, which has a 20 nm Al2O3 gate dielectric and a sub-micron gate-drain spacing of 0.6 µm. Among the device structure, the interface control between channel and gate is a key factor for MOSFET. The better the lattice matching between the gate and the channel layers, the better the interface structure between them will be. In this paper, Fe-doped β-Ga2O3 thin films have been grown at various substrate temperatures and oxygen partial pressures. The resistance increases markedly compared with pure β-Ga2O3, exhibiting the characteristic of high insulation. This study suggests that Fe-doped β-Ga2O3 thin film can be used as homogeneous epitaxial gate dielectric material to fabricate Ga2O3-based high-power devices.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant nos. 51572241, 51572033), Beijing Municipal Natural Science Foundation (Grant no. 2154055) and China Postdoctoral Science Foundation Funded Project (Grant no. 2014M550661).

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Authors and Affiliations

  1. Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China

    Yuanqi Huang, Han Wu, Yusong Zhi, Zhenping Wu, Peigang Li, Zhengwei Chen & Weihua Tang

  2. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China

    Zhenping Wu, Peigang Li, Zhengwei Chen & Weihua Tang

  3. Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018, China

    Yalei Huang & Daoyou Guo

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  1. Yuanqi Huang
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  2. Han Wu
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Correspondence to Daoyou Guo.

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Huang, Y., Wu, H., Zhi, Y. et al. High-insulating β-Ga2O3 thin films by doping with a valence controllable Fe element. Appl. Phys. A 124, 611 (2018). https://doi.org/10.1007/s00339-018-2037-z

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