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Polymer–electrolyte-gated nanowire synaptic transistors for neuromorphic applications

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Abstract

Polymer–electrolytes are formed by dissolving a salt in polymer instead of water, the conducting mechanism involves the segmental motion-assisted diffusion of ion in the polymer matrix. Here, we report on the fabrication of tin oxide (SnO2) nanowire synaptic transistors using polymer–electrolyte gating. A thin layer of poly(ethylene oxide) and lithium perchlorate (PEO/LiClO4) was deposited on top of the devices, which was used to boost device performances. A voltage spike applied on the in-plane gate attracts ions toward the polymer–electrolyte/SnO2 nanowire interface and the ions are gradually returned after the pulse is removed, which can induce a dynamic excitatory postsynaptic current in the nanowire channel. The SnO2 synaptic transistors exhibit the behavior of short-term plasticity like the paired-pulse facilitation and self-adaptation, which is related to the electric double-effect regulation. In addition, the synaptic logic functions and the logical function transformation are also discussed. Such single SnO2 nanowire-based synaptic transistors are of great importance for future neuromorphic devices.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (61306085).

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Authors and Affiliations

  1. Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, China

    Can Zou, Jia Sun, Guangyang Gou, Ling-An Kong, Chuan Qian, Guozhang Dai, Junliang Yang & Guang-hua Guo

  2. Department of Applied Physics, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, China

    Can Zou, Guozhang Dai & Guang-hua Guo

Authors
  1. Can Zou
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  2. Jia Sun
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  3. Guangyang Gou
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  4. Ling-An Kong
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  5. Chuan Qian
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  6. Guozhang Dai
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  8. Guang-hua Guo
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Correspondence to Jia Sun or Guang-hua Guo.

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Zou, C., Sun, J., Gou, G. et al. Polymer–electrolyte-gated nanowire synaptic transistors for neuromorphic applications. Appl. Phys. A 123, 597 (2017). https://doi.org/10.1007/s00339-017-1218-5

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