Skip to main content
SpringerLink
Log in

Effect of oxygen partial pressure on the density of states of amorphous InGaZnO thin-film transistors

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

The thin-film transistors (TFTs) with InGaZnO active layer with different oxygen partial pressures are fabricated by radio frequency sputtering. The influence of the oxygen partial pressure on the density of states (DOS) for InGaZnO-TFT is investigated by using temperature-dependent field-effect measurements. It indicates that the DOS become smaller with increasing oxygen partial pressure. The results are verified by the threshold voltage shift of InGaZnO-TFT with different oxygen partial pressures. The trend of the variation of DOS is consistent with that of the threshold voltage shift for InGaZnO-TFT. Thus, the gate bias instability is attributed to the charge trapping mechanism based on DOS. Therefore, this work offered a brief and accurate method to calculate DOS for demonstrating the bias stability of transistor.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7

Similar content being viewed by others

References

  1. H. Xu, D. Luo, M. Li, M. Xu, J. Zou, H. Tao, L. Lan, L. Wang, J. Peng, Y. Cao, J. Mater. Chem. C 2, 1255 (2012)

    Article  Google Scholar 

  2. K. Nomura, H. Ohta, K. Uata, T. Kamiya, M. Hirano, H. Hosono, Science 300, 1269 (2003)

    Article  ADS  Google Scholar 

  3. E. Fortunato, P. Barquinha, A. Pimental, A. Goncalves, A. Margues, L. Prerier, R. Martins, Adv. Mater. 17, 590 (2005)

    Article  Google Scholar 

  4. J. Li, Y.Z. Fu, C.X. Huang, J.H. Zhang, X.Y. Jiang, Z.L. Zhang, Appl. Phys. Lett. 108, 143505 (2016)

    Article  ADS  Google Scholar 

  5. J. Lee, Appl. Phys. Lett. 108, 203302 (2016)

    Article  ADS  Google Scholar 

  6. J.H. Park, K. Jeon, S. Lee, S. Kim, S. Kim, I. Song, C.J. Kim, J. Park, D.M. Kim, D.M. Kim, IEEE Electron Device Lett. 29, 1292 (2008)

    Article  ADS  Google Scholar 

  7. S. Lee, S. Park, S. Kim, Y. Jeon, K. Jeon, J.H. Park, J. Park, I. Song, C.J. Kim, Y. Park, D.M. Kim, D.H. Kim, IEEE Electron Device Lett. 31, 231 (2010)

    Article  ADS  Google Scholar 

  8. X. Zhou, M. Wang, I.E.E.E. Trans, Electron Devices 61, 863 (2014)

    Article  ADS  Google Scholar 

  9. C.Y. Jeong, J. Sohn, S.H. Song, I.T. Cho, J.H. Lee, E.S. Cho, H.I. Kwon, Appl. Phys. Lett. 102, 082103 (2013)

    Article  ADS  Google Scholar 

  10. M.H. Boratto, L.V.A. de Scalvi, Ceram. Int. 40, 3785 (2014)

    Article  Google Scholar 

  11. J. Li, J.H. Zhang, X.W. Ding, W.Q. Zhu, X.Y. Jiang, Z.L. Zhang, Superlattice Microst. 65, 14 (2014)

    Article  ADS  Google Scholar 

  12. T.E. Bae, H. Kim, J. Jung, W.J. Cho, Appl. Phys. Lett. 104, 153506 (2014)

    Article  ADS  Google Scholar 

  13. P. Kofstad, J. Phys. Chem. Solids 23, 1571 (1962)

    Article  ADS  Google Scholar 

  14. P. Bonasewicz, W. Hirschwald, G. Neumann, Phys. Status Solidi 97, 593 (1986)

    Article  ADS  Google Scholar 

  15. V. Gavryushin, G. Raciukaitis, D. Juodzbalis, A. Kazlauskas, V. Kubertavicius, J. Cryst. Growth 138, 924 (1994)

    Article  ADS  Google Scholar 

  16. K. Takechi, M. Nakata, T. Eguchi, H. Yamaguchi, S. Kaneko, J. Appl. Phys. 48, 011301 (2009)

    Article  Google Scholar 

  17. D.S. Han, D.Y. Moona, Y.J. Kang, J.H. Park, J.W. Park, Curr. Appl. Phys. 13, S98 (2013)

    Article  ADS  Google Scholar 

  18. K. Takechi, M. Nakata, T. Eguchi, H. Yamaguchi, S. Kaneko, J. Appl. Phys. 48, 011301 (2009)

    Article  Google Scholar 

  19. D.S. Han, D.Y. Moona, Y.J. Kang, J.H. Park, J.W. Park, Curr. Appl. Phys. 13, S98 (2013)

    Article  ADS  Google Scholar 

  20. Y.H. Tai, H.L. Chiu, L.S. Chou, J. Electrochem. Soc. 159, 200 (2012)

    Article  Google Scholar 

  21. F.R. Libsch, J. Kanicki, Appl. Phys. Lett. 62, 1286 (1993)

    Article  ADS  Google Scholar 

  22. M.J. Powell, Appl. Phys. Lett. 43, 597 (1983)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. School of Material Science and Engineering, Shanghai University, Jiading, Shanghai, 201800, People’s Republic of China

    Jun Li, Chuan-Xin Huang, Wen-Qing Zhu, Xue-Yin Jiang & Zhi-Lin Zhang

  2. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai, 200072, People’s Republic of China

    Jun Li, Jian-Hua Zhang, Zhi-Lin Zhang & Xi-Feng Li

Authors
  1. Jun Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Chuan-Xin Huang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Wen-Qing Zhu
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Jian-Hua Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Xue-Yin Jiang
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Zhi-Lin Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Xi-Feng Li
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Jun Li.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Li, J., Huang, CX., Zhu, WQ. et al. Effect of oxygen partial pressure on the density of states of amorphous InGaZnO thin-film transistors. Appl. Phys. A 122, 909 (2016). https://doi.org/10.1007/s00339-016-0447-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s00339-016-0447-3

Keywords

Search

Navigation