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A co-assembled organic thin film for nanoscale data storage with lowered threshold voltage

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Abstract

By means of photoelectric effect, nanoscale data storage with lowered pulsed voltage was achieved in an ordered co-assembled organic thin film using the scanning tunneling microscopy (STM) lithography method. The local I–V characteristics of the self-assembled thin film showed that the ultraviolet light-induced charge transfer could increase the value of the tunneling current and consequently induce the effective reduction in the tunneling barrier height. Furthermore, the macroscopic I–V characteristics of the thin film also demonstrated that the photoelectric effect can be used to lowering the threshold voltage for memory device. The results indicate that the tunable optoelectrical property of a material is of significance for highly efficient STM-based data storage and reduces the power consumption of storage device.

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Acknowledgments

This project is supported by National Natural Science Foundation of China (Grant No. 21103112), the Scientific Research Fund of Liaoning Provincial Education Department (Grant No. L2013235), China Postdoctoral Science Foundation (Grant No. 2014M560225), and Ministry of Housing and Urban–Rural Development of the People’s Republic of China (MOHURD) (Grant No. 2014-K4-020). Dr. Ying Ma gratefully thanks Dr. Jieyu Wang and Prof. Jian Pei from Peking University for their kindly affording experimental materials; Dr. Linfeng Chen and Prof. Yanlin Song from institute of Chemistry for their helpful discussions.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Shenyang Jianzhu University, Shenyang, 110168, China

    Ying Ma, Cong Zhao, Boxing An, Qing Wang, Fangxiao Shi, Xiumei Wang, Jianyan Ma, Yanbo Li, Meng Wang & Dan Wang

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  1. Ying Ma
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  2. Cong Zhao
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  3. Boxing An
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  4. Qing Wang
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  7. Jianyan Ma
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  9. Meng Wang
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  10. Dan Wang
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Correspondence to Ying Ma.

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Ma, Y., Zhao, C., An, B. et al. A co-assembled organic thin film for nanoscale data storage with lowered threshold voltage. Appl. Phys. A 119, 1477–1481 (2015). https://doi.org/10.1007/s00339-015-9123-2

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  • DOI: https://doi.org/10.1007/s00339-015-9123-2

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