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High-mobility transparent thin-film transistors with ZnSnLiO channel layer prepared by radio frequency magnetron sputtering

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Abstract

We have fabricated transparent thin-film transistors with ZnSnLiO as active layers deposited by radio frequency magnetron sputtering at room temperature. The TFTs structure used in this study was a staggered bottom-gate, which consists of SiO2 as a gate insulator and heavily doped p-type Si(1 1 1) as a gate electrode. In order to optimize the performance of the ZnSnLiO thin-film transistors, the thermal annealing is investigated. We find that appropriate annealing temperature is very beneficial for the ZnSnLiO TFTs, and when the annealing temperature is 500 °C, the transistor exhibited the high field-effect mobility of 45.1 cm2/V s and a large I on/off ratio of 6.0 × 107.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No. 51372016 and 61275022), and the Opened Fund of State Key Laboratory on Integrated Optoelectronics.

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Authors and Affiliations

  1. Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China

    Hailong Wang, Bin Li, Zuofu Hu, Huaihao Wu, Dongzhan Zhou, Yunfei Peng, Song Gao, Lixin Yi, Yongsheng Wang & Xiqing Zhang

  2. Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China

    Hailong Wang, Bin Li, Zuofu Hu, Huaihao Wu, Dongzhan Zhou, Yunfei Peng, Song Gao, Lixin Yi, Yongsheng Wang & Xiqing Zhang

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  1. Hailong Wang
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  2. Bin Li
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  3. Zuofu Hu
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  9. Yongsheng Wang
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  10. Xiqing Zhang
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Correspondence to Xiqing Zhang.

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Wang, H., Li, B., Hu, Z. et al. High-mobility transparent thin-film transistors with ZnSnLiO channel layer prepared by radio frequency magnetron sputtering. Appl. Phys. A 118, 1535–1538 (2015). https://doi.org/10.1007/s00339-014-8936-8

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  • DOI: https://doi.org/10.1007/s00339-014-8936-8

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