Abstract
Tuning charge transport in the bottom-contact pentacene-based organic thin-film transistors (OTFTs) using a MoO x capping layer that serves to the electron–phonon coupling modification is reported. For OTFTs with a MoO x front gate, the enhanced field-effect carrier mobility is investigated. The time domain data confirm the electron-trapping model. To understand the origin of a mobility enhancement, an analysis of the temperature-dependent Hall-effect characteristics is presented. Similarly, the Hall-effect carrier mobility was dramatically increased by capping a MoO x layer on the pentacene front surface. However, the carrier concentration is not affected. The Hall-effect carrier mobility exhibits strong temperature dependence, indicating the dominance of tunneling (hopping) at low (high) temperatures. A mobility enhancement is considered to come from the electron–phonon coupling modification that results from the contribution of long-lifetime electron trapping.
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The authors acknowledge the support of the Ministry of Science and Technology of Taiwan (Contract No. 103-2112-M-018-003-MY3) in the form of grants.
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Lin, YJ., Chang, HC. & Liu, DS. Tuning charge transport in pentacene thin-film transistors using the strain-induced electron–phonon coupling modification. Appl. Phys. A 118, 1205–1210 (2015). https://doi.org/10.1007/s00339-014-8878-1
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DOI: https://doi.org/10.1007/s00339-014-8878-1