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Removal of oxygen atoms from a SiO2 surface by incoherent vacuum ultraviolet excimer irradiation

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Abstract.

We have demonstrated the non-thermal removal of oxygen atoms from an oxidized silicon surface (SiO2) on a silicon wafer by the use of a low-power (0.3 mW cm-2) incoherent vacuum ultraviolet (VUV) light source at 126 nm. X-ray photoelectron spectroscopy (XPS) has shown that a maximum Si concentration of 80% appears at the surface after a 20-h irradiation with 9.8 eV photons, as a result of oxygen removal from the SiO2 matrix. The surface morphology, however, indicates no damage or melting on the surface even after the irradiation.

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering and Photon Science Center, Miyazaki University, Gakuen Kibanadai Nishi 1-1, Miyazaki, 889-2192 Japan, , , , , , JP

    T. Ohtsubo, T. Azuma, M. Takaura, T. Higashiguchi, S. Kubodera & W. Sasaki

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  1. T. Ohtsubo
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  2. T. Azuma
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  3. M. Takaura
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  4. T. Higashiguchi
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  5. S. Kubodera
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  6. W. Sasaki
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Received: 15 April 2002 / Accepted: 17 April 2002 / Published online: 10 September 2002

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ID="*"Permanent address: Nano-Tech Photon Inc., Shimotomita 4132-1, Shintomi, Miyazaki, 889-1404, Japan

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ID="**"Corresponding author. Fax: +81-985/583-899, E-mail: kubodera@opt.miyazaki-u.jp

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Ohtsubo, T., Azuma, T., Takaura, M. et al. Removal of oxygen atoms from a SiO2 surface by incoherent vacuum ultraviolet excimer irradiation . Appl Phys A 76, 139–141 (2003). https://doi.org/10.1007/s00339-002-1458-9

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  • DOI: https://doi.org/10.1007/s00339-002-1458-9

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