Abstract
This article presents a brief review and original studies of the elastic-plastic properties of nanoscale and microscale thin films on substrates. Studies are conducted on the example of wide gap semiconductor films, which are extremely important for modern micro-and-optoelectronics, such as: gallium nitride, silicon carbide and gallium oxide grown on silicon substrates. The focus is on the effect of film nanoscale on methods for analyzing experimental nanoindentation results. In particular, methods for the analysis of two-layer nanoscale films, as well as films of anisotropic materials, are discussed. The dynamics of elastic stresses in the indenter area are analyzed by the Raman maps. The main methods for modeling the elastoplastic properties of films by quantum chemistry and molecular dynamics are considered.
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References
A. P. Termovskii, V. P. Alechin, M. H. Shorshorov, M. M. Chrushchev, et. al, “On Micromechanical Testing of Materials by Indentation,” Zavod. Lab. 39(10), 1242–1247 (1973).
S. I. Bulychov, V. P. Alehin, M. H. Shorshorov, A. P. Ternovskii, et al., “Determination of Young’s Modulus from the Indenter Indentation Diagram,” Zavod. Lab. 41(9), 1137–1141 (1975).
S. A. Kukushkin and A. V. Osipov, “A New Method for the Synthesis of Epitaxial Layers of Silicon Carbide on Silicon Owing to Formation of Dilatation Dipoles,” J. App. Phys. 113(2), 024909 (2013).
S. A. Kukushkin and A. V. Osipov, and N. A. Feoktistov, “Synthesis of Epitaxial Silicon Carbide Films through the Substitution of Atoms in the Silicon Crystal Lattice: a Review,” Fiz. Tv. Tela 56(8), 1457–1485 (2014) [Phys. Sol. Stat. (Engl. Transl.) 56 (8), 1507–1535 (2014)].
A. K. Bhattacharya and W. D. Nix, “Finite Element Simulation of Indentation Experiments,” Int. J. Sol. Struct. 24(9), 881–891 (1988).
R. Quay, Gallium Nitride Electronics (Springer Science & Business Media, 2008).
A. S. Grashchenko, S. A. Kukushkin, and A. V. Osipov, “Microhardness Study of Two-Layer nanostructures by a Nanoindentation Method,” Mat. Phys. Mech. 24(1), 35–40 (2015).
B. Bhushan, “Self-Assembled Monolayers for Nanotribology and Surface Protection,” in Nanotribology and Nanomechanics II: Nanotribology, Biomimetics, and Industrial Applications, ed. by B. Bhushan (Springer Science & Business Media, 2011), pp. 403–462.
A. S. Grashchenko, S.A. Kukushkin, and A. V. Osipov, “Nanoindentation and Deformation Properties of Nanoscale Silicon Carbide Films on Silicon Substrate,” Tech. Phys. Lett. 40(12), 1114–1116 (2014).
W. C. Oliver and G. M. Pharr, “An Improved Technique for Determining Hardness and Elastic Modulus Using Load and Displacement Sensing Indentation Experiments,” J. Mat. Res. 7(6), 1564–1583 (1992).
M. F. Doerner and W. D. Nix, “A Method for Interpreting the Data from Depth-Sensing Indentation Instruments,” J. Mat. Res. 1(4), 601–609 (1986).
A. V. Red’kov, A. V. Osipov, and S. A. Kukushkin, “Molecular Dynamics Simulation of the Indentation of Nanoscale Films on a Substrate,” Pism. Zh. Tekh. Fiz. 42(12), 64–72 (2016) [Tech. Phys. Lett. (Engl. Transl.) 42 (12), 639–643 (2016)].
S. A. Kukushkin, A. V. Osipov, E. V. Osipova, N. A. Feoktistov, et al., “Epitaxial Gallium Oxide on a SIC/SI Substrate,” Fiz. Tv. Tela 58(9), 1812–1817 (2016) [Phys. Sol. Stat. (Engl. Transl.) 58 (9), 1876–1881 (2016)].
J. G. Lee, Computational Materials Science: an Introduction (Crc Press, 2016).
P. Giannozzi, et al., “QUANTUM ESPRESSO: a Modular and Open-Source Software Project for Quantum Simulations of Materials,” J. Phis. Cond. Mat. 21(39), 395–502 (2009).
J. P. Perdew, et al., “Restoring the Density-Gradient Expansion for Exchange in Solids and Surfaces,” Phys. Rev. Lett. 100(13), 136–406 (2008).
K. Tapily, et al., “Thermal Behavior of the Mechanical Properties of GaN Throughout Hydrogeninduced thin Layer Transfer,” ECS Trans. 33(4), 241–248 (2010).
V. I. Nikolaev, V. V. Shpeizman and B. I. Smirnov, “Determination of Elastic Moduli of Gan Epitaxial Layers by Microindentation Technique,” Fiz. Tv. Tela 42(3), 428–431 (2000) [Phys. Sol. Stat. (Engl. Transl.) 42(3), 437–440 (2000)].
S. Tripathy et al., “Micro-Raman Investigation of Strain in GaN and AlxGa1−xN/GaN Heterostructures Grown on Si(111),” J. App. Phys. 92(7), 3503–3510 (2002).
S. Plimpton, “Fast Parallel Algorithms for Short-Range Molecular Dynamics,” J. Comp. Phys. 117(1), 1–19 (1995).
A. Stukowski, “Visualization and Analysis of Atomistic Simulation Data with OVITOЦthe Open Visualization Tool,” Mod. Sim. Mat. Sci. Engng. 18(1), 015012 (2009).
J. F. Nye, Physical Properties of Crystals: their Representation by Tensors and Matrices (Oxford University Press, 1985).
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Original Russian Text © A.S. Grashchenko, S.A. Kukushkin, A.V. Osipov, A.V. Red’kov, 2018, published in Izvestiya Akademii Nauk, Mekhanika Tverdogo Tela, 2018, No. 5, pp. 5–14.
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Grashchenko, A.S., Kukushkin, S.A., Osipov, A.V. et al. Investigation of the Physicomechanical Characteristics of Nanoscale Films by Nanoindentation. Mech. Solids 53, 481–488 (2018). https://doi.org/10.3103/S0025654418080010
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DOI: https://doi.org/10.3103/S0025654418080010