Abstract
Compound semiconductor materials can meet various requirements as advanced materials for the information era, which can be roughly divided into second- and third-generation semiconductor materials. The second-generation semiconductor materials mainly include GaAs, InAs, InP, etc., and are often used to fabricate high-speed, high frequency electronic devices, and optical electronic devices. The third generation of semiconductor materials is represented by silicon carbide (SiC), gallium nitride (GaN), etc., which have large band gap, and are generally used for power electronic devices, high frequency devices, LEDs, and semiconductor lasers. This chapter focuses on the growth methods, physical and optoelectronic properties of various compound semiconductor materials, and their substrate materials.
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References
K. Shao, Development and application of III-V compound semiconductor integrated circuit industry[J]. China Integrated Circuit 44, 38–41 (2003)
C. Zhou, LEC Technology of GaAs Single Crystals[D] (Tianjian University, Tianjin, 2009)
H. Nelson, Epitaxial growth from the liquid state and its application to the fabrication of tunnel and laser diodes [J]. RCA Rev. 24, 603–615 (1963)
H.M. Manasevit, Single-crystal gallium arsenide on insulating substrates [J]. Appl. Phys. Lett. 12(4), 156–159 (1968)
E.H. Li, Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures [J]. Phys. E. 5, 215–273 (2000)
Y. Takeda, A. Sasaki, Y. Imamura, et al., Electron mobility and energy gap of In0.53Ga0.47As on InP substrate [J]. J. Appl. Phys. 47(12), 5405–5408 (1976)
R.J. Nicholas, J.C. Portal, C. Houlbert, et al., An experimental determination of the effective masses for GaxIn1−x AsyP1−y alloys grown on InP [J]. Appl. Phys. Lett. 34(8), 492–494 (1979)
C. Hermann, T.P. Pearsall, Optical pumping and the valence-band light-hole effective mass in GaxIn1−xAsyP1−y (y≃2.2x) [J]. Appl. Phys. Lett. 38(6), 450–452 (1981)
J.A. Lely, Darstellung von Einkristallen von Silicium Carbi Art und Menge der cingcbaten Verumrcinigungen. Beriehtc der Deutschcn Kcramischcn Cesellsehall. 32, 229–236 (1955)
T.D. Ladd, F. Jelezko, R. Laflamme, et al., Quantum computers. Nature 464(464), 45–53 (1994)
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Yang, D., Kang, J., Yu, X. (2024). Compound Semiconductors. In: Wang, Y., Chi, MH., Lou, J.JC., Chen, CZ. (eds) Handbook of Integrated Circuit Industry. Springer, Singapore. https://doi.org/10.1007/978-981-99-2836-1_77
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DOI: https://doi.org/10.1007/978-981-99-2836-1_77
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Publisher Name: Springer, Singapore
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Online ISBN: 978-981-99-2836-1
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