Abstract
Power devices are typically used in applications where high voltage, large current, and high frequency are requirements. For example, power devices are required in high-voltage transmission, power electronic equipment, electric vehicles, and in locomotives, etc. As silicon-based materials are approaching their performance limit, high bandgap materials, such as gallium nitride (GaN) and silicon carbide (SiC) are becoming mature and entering the application market. Power devices include power diode, power BJT, power MOSFET, insulated gate bipolar transistor (IGBT), super junction thyristor, gate turn-off thyristor (GTO), insulated gate-commutated thyristor (IGCT), emitter turn-off thyristor (ETO), MOS controlled thyristor (MCT), etc. These devices are briefly described in this chapter with their basic structures, working principles, and mechanisms.
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Lin, X., Gong, Z., Lou, J.JC. (2024). Products of Power Devices. In: Wang, Y., Chi, MH., Lou, J.JC., Chen, CZ. (eds) Handbook of Integrated Circuit Industry. Springer, Singapore. https://doi.org/10.1007/978-981-99-2836-1_16
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DOI: https://doi.org/10.1007/978-981-99-2836-1_16
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