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Impact of Negative Bottom Gate Voltage for Improvement of RF/Analog Performance in Asymmetric Junctionless Dual Material Double Gate MOSFET

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New Horizons in Millimeter-Wave, Infrared and Terahertz Technologies

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 953))

Abstract

Research on double-gate MOSFET has already exhibited several novel solutions of existing problems like reducing leakage current or short-channel effect. For both long-channel structure or microscopic devices, the role of the bottom-gate becomes more critical for making higher ON-to-OFF current ratio, and therefore, individual-gate architecture becomes more popular than tied-gate architecture owing to the possibility of individual tuning. Junctionless devices come into the limelight due to better mobility control than the other DG configurations, and considered the subject of investigation in the last few years. The current chapter investigates the effect of negative bottom gate voltage on the analog and RF performances of Asymmetric Junctionless Dual Material Double Gate (AJDMDG) MOSFET. TCAD device simulator was used to investigate the effect of negative bottom gate voltage on analog and RF parameters. The results show that utilizing a low value of the work function of the bottom gate terminal improved the analog and RF performance.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Brainware University, Barasat, 700125, India

    Arighna Basak

  2. Department of Electronics and Communication Engineering, RCC Institute of Information Technology, Kolkata, 700015, India

    Arpan Deyasi

  3. Department of Electronics and Communication Engineering, Kalyani Government Engineering College, Kalyani, 741235, India

    Angsuman Sarkar

Authors
  1. Arighna Basak
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  2. Arpan Deyasi
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  3. Angsuman Sarkar
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Corresponding author

Correspondence to Arpan Deyasi .

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Editors and Affiliations

  1. Electronics and Communication Engineering, Cooch Behar Government Engineering College, Cooch Behar, India

    Aritra Acharyya

  2. School of Mines and Metallurgy, Kazi Nazrul University, Asansol, India

    Arindam Biswas

  3. Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan

    Hiroshi Inokawa

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Basak, A., Deyasi, A., Sarkar, A. (2022). Impact of Negative Bottom Gate Voltage for Improvement of RF/Analog Performance in Asymmetric Junctionless Dual Material Double Gate MOSFET. In: Acharyya, A., Biswas, A., Inokawa, H. (eds) New Horizons in Millimeter-Wave, Infrared and Terahertz Technologies. Lecture Notes in Electrical Engineering, vol 953. Springer, Singapore. https://doi.org/10.1007/978-981-19-6301-8_12

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  • DOI: https://doi.org/10.1007/978-981-19-6301-8_12

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  • Print ISBN: 978-981-19-6300-1

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