Abstract
In this manuscript, the tunnel field effect transistors (TFETs) are explored and analyzed completely starting from the tunneling models to various device structures. Initially, the need of quantum mechanical tunneling and its tunneling principle is discussed with the help of Schrodinger equation. Then, various tunneling models local as well as nonlocal tunneling models which are incorporated in the TFETs to support tunneling are briefed. In addition, the conventional TFETs device structure and its fundamental principle of operation are examined with the support of energy band diagrams in the ON condition and ON condition. Finally, to achieve more energy efficient technology, double gate TFET, carbon nanotube TFET, graphene-based TFET, and nanowire TEFT structures and their benefits are examined.
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Acknowledgement
We would like to thank Dr. Saima Beg for providing lab facilities and research environment to carry out this work.
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Gupta, R., Beg, S. (2022). A Complete Analysis: From Model to Device Level of Tunnel Field Effect Transistors. In: Kaiser, M.S., Bandyopadhyay, A., Ray, K., Singh, R., Nagar, V. (eds) Proceedings of Trends in Electronics and Health Informatics. Lecture Notes in Networks and Systems, vol 376. Springer, Singapore. https://doi.org/10.1007/978-981-16-8826-3_41
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DOI: https://doi.org/10.1007/978-981-16-8826-3_41
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