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Evolution of Tunnel Field-Effect Transistor and Scope in Low Power Applications: A Detailed Review

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Micro and Nanoelectronics Devices, Circuits and Systems

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 904))

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Abstract

The emerging novel device tunnel field-effect transistor (TFET) has fascinated the scientific community with its distinct features such as lower subthreshold slope (SS), small leakage currents and minimized short channel effects. Hence, TFET was found to be an appropriate device for low power and high-frequency applications. The prime objective of this manuscript is to elaborate on recent significant contributions made by the researchers to surpass its limitations such as ambipolar behavior, low ION/IOFF ratio and to improve subthreshold swing (SS). The influence of temperature (200–400 K) and ferroelectric material on the device performance was also reviewed in detail.

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Abbreviations

MOSFET:

Metal oxide semiconductor field-effect transistor

TFET:

Tunnel field-effect transistor

CMOS:

Complementary metal–oxide–semiconductor

BTBT:

Band-to-band tunneling

CNT:

Carbon nanotube

TAT:

Trap assisted tunneling

DIBL:

Drain induced barrier lowering

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Acknowledgements

The authors would like to thank NIT Silchar, India, for providing financial support.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology, Silchar,, Assam, 788010, India

    Ramesh Potharaju & Bijit Choudhuri

Authors
  1. Ramesh Potharaju
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  2. Bijit Choudhuri
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Corresponding author

Correspondence to Ramesh Potharaju .

Editor information

Editors and Affiliations

  1. Electronics and Communication Engineering, National Institute Of Technology Silchar, Silchar, India

    Trupti Ranjan Lenka

  2. Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, USA

    Durgamadhab Misra

  3. Electronic Materials Engineering, Australian National University, Canberra, ACT, Australia

    Lan Fu

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Potharaju, R., Choudhuri, B. (2023). Evolution of Tunnel Field-Effect Transistor and Scope in Low Power Applications: A Detailed Review. In: Lenka, T.R., Misra, D., Fu, L. (eds) Micro and Nanoelectronics Devices, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 904. Springer, Singapore. https://doi.org/10.1007/978-981-19-2308-1_16

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  • DOI: https://doi.org/10.1007/978-981-19-2308-1_16

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  • Online ISBN: 978-981-19-2308-1

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