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Silicon Carbide Nanowires and Electronics

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Nanowire Electronics

Part of the book series: Nanostructure Science and Technology ((NST))

Abstract

Silicon carbide (SiC) is recognized as one of the most important candidates of the third-generation semiconductors, owing to their superior properties such as outstanding mechanical properties, excellent chemical inertness, high thermal stability, as well as high thermal conductivity, which allow the SiC materials having the unique advantage to serve under high-temperature/high-voltage/high-power harsh environments. In this chapter, firstly, we presented a comprehensive overview on the recent advances with respect to the rational design and growth of SiC nanowires with different morphologies and dopings. Secondly, we highlighted the electronics of the SiC nanowires associated with their potential applications in field emission emitters, supercapacitors, photocatalysts, field-effect transistors, and pressure sensors. Finally, we made personal perspectives on the future research interests and directions of the SiC nanowires.

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  1. Institute of Materials, Ningbo University of Technology, Ningbo, China

    Shanliang Chen, Weijun Li, Xiaoxiao Li & Weiyou Yang

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  1. Institute of Semiconductors Chinese Academy of Sciences, Beijing, China

    Guozhen Shen

  2. Department of Materials Science and Engineering, National Tsing-Hua University, Taiwan, China

    Yu-Lun Chueh

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Chen, S., Li, W., Li, X., Yang, W. (2019). Silicon Carbide Nanowires and Electronics. In: Shen, G., Chueh, YL. (eds) Nanowire Electronics. Nanostructure Science and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-13-2367-6_8

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