Abstract
Galvanic etching of silicon is reviewed. Galvanic etching is an anodic process that occurs at open circuit. It results from the exposure of a metal contact on a semiconductor surface to an appropriate solution. It can be performed in either acidic or alkaline solutions and can be used to form porous layers or for complete removal of a region of semiconductor. Recently it has found particular application to form combustible layers, which act as high-density energy sources for micromechanical systems. Galvanic etching has also been used in the fabrication of membranes, freestanding beams, and MEMS.
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Kolasinski, K.W. (2017). Porous Silicon Formation by Galvanic Etching. In: Canham, L. (eds) Handbook of Porous Silicon. Springer, Cham. https://doi.org/10.1007/978-3-319-04508-5_3-2
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DOI: https://doi.org/10.1007/978-3-319-04508-5_3-2
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Latest
Porous Silicon Formation by Galvanic Etching- Published:
- 10 February 2017
DOI: https://doi.org/10.1007/978-3-319-04508-5_3-2
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Original
Porous Silicon Formation by Galvanic Etching- Published:
- 30 April 2014
DOI: https://doi.org/10.1007/978-3-319-04508-5_3-1