Abstract
The effects of Si concentration and temperature on the wettability and interfacial reaction in the Al/α-SiC system were investigated. An increase in the Si concentration significantly promotes the wettability and inhibits the formation of Al4C3 at the interface, but decreases the spreading rate of the liquid in the early stage. The wetting is sensitive to temperature. The higher the temperature, the faster the spreading rate; whereas, the final equilibrium contact angles show a first decrease and then increase with increasing temperature, reaching minimum values of 40±2° at 1123–1173 K for a Al-10 wt.% Si alloy. In the case of the interfacial reaction being inhibited, the mechanism for the wetting improvement is attributed to the Si segregation-induced reduction in both liquid surface tension and solid-liquid interfacial tension. Otherwise, the formation of Al4C3 plays a dominant role in the wetting, leading to the final equilibrium contact angles of 56±3°.
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Cong, XS., Shen, P., Wang, Y., Bai, ZH., Jiang, QC. (2013). Role of Si in the Wetting of α-SiC by Al. In: Marquis, F. (eds) Proceedings of the 8th Pacific Rim International Congress on Advanced Materials and Processing. Springer, Cham. https://doi.org/10.1007/978-3-319-48764-9_188
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DOI: https://doi.org/10.1007/978-3-319-48764-9_188
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-48586-7
Online ISBN: 978-3-319-48764-9
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