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Simulation of Nanoscale Double-Gate MOSFETs

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Progress in Industrial Mathematics at ECMI 2012

Part of the book series: Mathematics in Industry ((TECMI,volume 19))

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Abstract

A nanoscale double-gate MOSFET is simulated by using a subband model based on the maximum entropy principle (MEP).

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References

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Acknowledgements

G.M. acknowledges the financial support by P.R.A., University of Calabria. V.R. acknowledges the financial support by P.R.A., University of Catania and the P.R.I.N. project 2010 “Kinetic and macroscopic models for particle transport in gases and semiconductors: analytical and computational aspects.”

Author information

Authors and Affiliations

  1. Department of Mathematics and Computer Science, University of Catania, viale A. Doric 6, 95125, Catania, Italy

    V. Dario Camiola & Vittorio Romano

  2. Department of Mathematics and Computer Science, University of Calcaria, and INFN-Gruppo c. Cosenza, 87036, Cosenza, Italy

    Giovanni Mascali

Authors
  1. V. Dario Camiola
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  2. Giovanni Mascali
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  3. Vittorio Romano
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Corresponding author

Correspondence to Vittorio Romano .

Editor information

Editors and Affiliations

  1. Lunds Universitet, Centre for Mathematical Sciences, Lund, Sweden

    Magnus Fontes

  2. Bergische Universität Wuppertal, Applied Math. and Numerical Analysis, Wuppertal, Germany

    Michael Günther

  3. Lehrstuhl für Angew.Math. 1, Friedrich-Alexander-Universität Erlangen, Department of Mathematics, Erlangen, Germany

    Nicole Marheineke

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© 2014 Springer International Publishing Switzerland

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Camiola, V.D., Mascali, G., Romano, V. (2014). Simulation of Nanoscale Double-Gate MOSFETs. In: Fontes, M., Günther, M., Marheineke, N. (eds) Progress in Industrial Mathematics at ECMI 2012. Mathematics in Industry(), vol 19. Springer, Cham. https://doi.org/10.1007/978-3-319-05365-3_4

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