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Development of large area nanostructured silicon-hydrogen alloy material with improved stability for solar cell application by argon dilution method

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Abstract

Here we have presented the results of large area (30 × 30 cm2) silicon-hydrogen alloy material and solar cell by argon dilution method. As an alternative to hydrogen dilution, argon dilution method has been applied to develop single junction solar cell with appreciable stability. Optimization of deposition conditions revealed that 95% argon dilution gives a nanostructured material with improved transport property and less light induced degradation. The minority carrier diffusion length (L d ) and mobility-lifetime (μτ) product of the material with 95% argon dilution degrades least after light soaking. Also the density of states (DOS) below conduction level reveals that this material is less defective. Solar cell with this argon diluted material has been fabricated with all the layers deposited by argon dilution method. Finally we have compared the argon diluted solar cell results with the optimized hydrogen diluted solar cell. Light soaking study proves that it is possible to develop stable solar cell on large area by argon dilution method and that the degradation of argon diluted solar cell is less than that of hydrogen diluted one.

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Authors and Affiliations

  1. Department of Physics, Jadavpur University, Kolkata, 700 032, India

    Arka Dey, Mrinmay Das, Joydeep Datta, Rajkumar Jana, Joydeep Dhar, Sayantan Sil, Debasish Biswas & Partha Pratim Ray

  2. CEGESS, Indian Institute of Engineering Science and Technology, Shibpur, Howrah, 711103, India

    Chandan Banerjee

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  1. Arka Dey
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  2. Mrinmay Das
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  3. Joydeep Datta
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  4. Rajkumar Jana
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  5. Joydeep Dhar
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  6. Sayantan Sil
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  7. Debasish Biswas
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  8. Chandan Banerjee
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  9. Partha Pratim Ray
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Correspondence to Partha Pratim Ray.

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Dey, A., Das, M., Datta, J. et al. Development of large area nanostructured silicon-hydrogen alloy material with improved stability for solar cell application by argon dilution method. Electron. Mater. Lett. 12, 456–461 (2016). https://doi.org/10.1007/s13391-016-4006-z

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  • DOI: https://doi.org/10.1007/s13391-016-4006-z

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