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Carrier Transport Mechanism and Barrier Height of B-, Al- and B-Al-Ion-Doped ZnO Film/Graphene Schottky Contacts Prepared Using the Sol–Gel Method

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Abstract

In this article, graphene/ZnO Schottky contacts with different ion doping were fabricated by the sol–gel method. The results showed that the nanoparticles growth on the surface of ZnO film was limited by ion doping, and the number and size of nanoparticles decreased for B ion doping. Further, the ZnO film band gap presented a decreasing trend with B, Al and B-Al ion doping. The electrical properties of the graphene/ZnO Schottky contact incorporating an ion-doped ZnO film were investigated, where the results suggested that ion doping could effectively improve the barrier height and reduce the leakage current. This phenomenon can be explained by the reduction of the oxygen vacancies on the surface of the ZnO film by ion doping, which leads to a reduction of the defect level at the interface and weakened Fermi level pinning.

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Acknowledgments

This work was supported by National Natural Science Foundation of China under contract No. 51504147 and No. 21502109, the Industrial Field of Key Research and Development Plan of Shaanxi Province No. 2018GY-040, the Natural Science Foundation of Shaanxi Province No. 2017JQ2017 and the Doctor Foundation of Shaanxi University of Technology No. SLGQD2017-12. Thank you to Mr.Wang of Northwest Research Institute of nonferrous metals for XPS measurement.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong, 723000, China

    Yapeng Li, Kai Ma, Pengju Xia, Hua Wang, Xiangyu Zou & Yan Liu

  2. School of Electrical Engineering, Shaanxi University of Technology, Hanzhong, 723000, China

    Yingfeng Li

  3. Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong, 723000, China

    Qiang Zhang

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  1. Yapeng Li
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Li, Y., Ma, K., Li, Y. et al. Carrier Transport Mechanism and Barrier Height of B-, Al- and B-Al-Ion-Doped ZnO Film/Graphene Schottky Contacts Prepared Using the Sol–Gel Method. J. Electron. Mater. 48, 3713–3720 (2019). https://doi.org/10.1007/s11664-019-07131-8

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