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The effect of annealing on electrical properties of graphene/ZnO schottky contact

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Abstract

Graphene/ZnO schottky contacts was fabricated by the sol–gel method. The results showed that the crystallization of the ZnO films was improved with increasing of annealing temperature and a grain growth demonstrates in the preferred direction of (002). The graphene/ZnO schottky contact ideality factor decreased and barrier height values increased with increasing of annealing temperature. This result can be explained by weakening of the Fermi level pinning owing to the reduction of oxygen vacancies at the interface.

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Acknowledgements

This work was supported by National Natural Science Foundation of China under contract No. 21502109, the Natural Science Foundation of Shaanxi Province No. 2017JQ2017 and the Doctor Foundation of Shaanxi University of Technology No. SLGQD2017-12. Thank you for Mr.Wang of Northwest Research Institute of nonferrous metals for XPS measurement respectively.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong, 723001, China

    Yapeng Li, Hui Zhang & Ling Tang

  2. School of Electrical Engineering, Shaanxi University of Technology, Hanzhong, 723001, China

    Yingfeng Li

  3. Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong, 723001, China

    Qiang Zhang

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  1. Yapeng Li
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  2. Yingfeng Li
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Correspondence to Yapeng Li.

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Li, Y., Li, Y., Zhang, H. et al. The effect of annealing on electrical properties of graphene/ZnO schottky contact. J Mater Sci: Mater Electron 29, 12408–12413 (2018). https://doi.org/10.1007/s10854-018-9356-x

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  • DOI: https://doi.org/10.1007/s10854-018-9356-x

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