Abstract
Amorphization and solid-phase epitaxial growth were studied in C-cluster ion-implanted Si. C7H7 ions were implanted at a C-equivalent energy of 10 keV to C doses of 0.1 × 1015 cm−2 to 8.0 × 1015 cm−2 into (001) Si wafers. Transmission electron microscopy revealed a C amorphizing dose of ~5.0 × 1014 cm−2. Annealing of amorphized specimens to effect solid-phase epitaxial growth resulted in defect-free growth for C doses of 0.5 × 1015 cm−2 to 1.0 × 1015 cm−2. At higher doses, growth was defective and eventually polycrystalline due to induced in-plane tensile stress from substitutional C incorporation.
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Acknowledgements
The authors acknowledge the Semiconductor Research Corporation for funding this research. The␣Major Analytical Instrumentation Center at the University of Florida is acknowledged for use of the focused ion beam, x-ray diffraction, and transmission electron microscope facilities.
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Rudawski, N., Whidden, L., Craciun, V. et al. Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si. J. Electron. Mater. 38, 1926–1930 (2009). https://doi.org/10.1007/s11664-009-0862-8
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DOI: https://doi.org/10.1007/s11664-009-0862-8