Temperature effect on porous silicon luminescence J. B. XiaK. W. Cheah Solids and Materials Pages: 227 - 231
Generation mechanism and thermal stability of high carrier concentrations by KrF-excimer-laser doping of Si into GaAs K. SugiokaK. Toyoda Solids and Materials Pages: 233 - 237
In-situ formation of p-n junctions in semiconducting TiO2 M. KlinglerW. Weppner Solids and Materials Pages: 239 - 243
Copper as an electron trap in GaAs0.6P0.4 H. S. TanM. K. HanH. Gong Solids and Materials Pages: 245 - 251
Effects of co-dopant concentrations and excitation conditions on the 2 μm fluorescence dynamics in Tm, Ho:YLF crystals M. FalconieriG. Salvetti Solids and Materials Pages: 253 - 258
Semi-insulating GaAs: A possible substrate for a field-assisted positron moderator Y. Y. ShanH. L. AuH. M. Weng Solids and Materials Pages: 259 - 273
Analysis of UV radiation transport in polymers exhibiting one-photon incubated absorption P. E. DyerD. M. Karnakis Surfaces and Multilayers Pages: 275 - 279
Surface cleaning of metals by pulsed-laser irradiation in air Y. F. LuM. TakaiY. Aoyagi Surfaces and Multilayers Pages: 281 - 288
Femtosecond excimer-laser-induced structure formation on polymers J. HeitzE. ArenholzH. M. Phillips Surfaces and Multilayers Pages: 289 - 293
Depth profiling a III–V multilayered structure with an excimer laser O. L. BourneD'Arcy HartP. A. Hackett Surfaces and Multilayers Pages: 295 - 297
Laser-ionization mass-spectrometric studies on laser ablation of a nitrogen-rich polymer at 532 nm and 1064 nm F. KokaiY. KogaK. Fukuda Surfaces and Multilayers Pages: 299 - 304
Defect annealing of alpha-particle irradiated n-GaAs S. A. GoodmanF. D. AuretG. Myburg Surfaces and Multilayers Pages: 305 - 310
Observation of magnetic-field-enhanced excitation and ionization in the plume of KrF-laser-ablated magnesium L. DirnbergerP. E. DyerP. H. Key Surfaces and Multilayers Pages: 311 - 316
Modified complex method for constrained design and optimization of optical multilayer thin-film devices N. K. SahooK. V. S. R. Apparao Surfaces and Multilayers Pages: 317 - 326
Organic/semiconductor superlattices as an attractive perspective R. IonovA. Angelova Surfaces and Multilayers Pages: 327 - 330
Modified methods for the calculation of real Schottky-diode parameters D. GromovV. Pugachevich Surfaces and Multilayers Pages: 331 - 333
Studies of the promising material CoSi2 on GaAs substrates G. JinC. WeideC. C. Hsu Surfaces and Multilayers Pages: 335 - 337