1. ROMANS II A two-dimensional process simulator for modeling and simulation in the design of VLSI devices

   • C. D. Maldonado

   Invited Paper Pages: 119 - 138

2. Investigation of impurity levels inn-type indium selenide by means of Hall effect and deep level transient spectroscopy

   • A. Segura
   • K. Wünstel
   • A. Chevy

   Contributed Papers Pages: 139 - 145

3. Deep levels subsisting in ion implanted silicon after various transient thermal annealing procedures

   • A. Mesli
   • J. C. Muller
   • P. Siffert

   Contributed Papers Pages: 147 - 152

4. Inelastic energy loss in solids

   • I. Nagy
   • J. László
   • J. Giber

   Contributed Papers Pages: 153 - 155

5. Temperature and concentration dependence of epitaxial growth rate in Sb and Ga implanted Si

   • S. U. Campisano
   • Chu Te Chang

   Contributed Papers Pages: 157 - 160

6. Charge state of ions in liquid metal field ion sources

   • D. R. Kingham

   Contributed Papers Pages: 161 - 164

7. Study of the structure of ac(2×2) overlayer of carbon monoxide on Co(001) by LEED intensity measurements

   • M. Maglietta

   Contributed Papers Pages: 165 - 170

8. Forthcoming papers

   Announcement Pages: A5 - A5