Volume 18, Issue 3

Opto-Electronics Review is now archived and no longer receiving submissions with this publisher. All articles published in the journal during its time with Springer will remain fully searchable through our websites.

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September 2010

22 articles in this issue

Foreword
F.F. Sizov
EditorialNotes 05 September 2010 Pages: 1 - 1
Field effect transistors for terahertz detection - silicon versus III–V material issue
W. Knap
H. Videlier
G. Valušis
Invited Paper 05 September 2010 Pages: 225 - 230
Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides
H. Zogg
M. Rahim
N. Quack
Invited Paper 05 September 2010 Pages: 231 - 235
320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter
V.V. Vasilyev
V.S. Varavin
A.O. Susliakov
OriginalPaper 05 September 2010 Pages: 236 - 240
Energy-band diagrams and capacity-voltage characteristics of Cd_xHg_1−xTe-based variband structures calculated with taking into account dependence of electron affinity on a composition
A.V. Voitsekhovskii
D.I. Gorn
A.P. Kokhanenko
OriginalPaper 05 September 2010 Pages: 241 - 245
A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer
S. Chowdhury
S. Adhikary
S. Chakrabarti
OriginalPaper 05 September 2010 Pages: 246 - 249
THz/sub-THz bolometer based on electron heating in a semiconductor waveguide
V. Dobrovolsky
F. Sizov
OriginalPaper 05 September 2010 Pages: 250 - 258
Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe
A.V. Voitsekhovskii
S.N. Nesmelov
M.V. Yakushev
OriginalPaper 05 September 2010 Pages: 259 - 262
Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg_1−xCd_xTe at passivation by epitaxially grown in situ CdTe
A.V. Voitsekhovskii
S.N. Nesmelov
M.V. Yakushev
OriginalPaper 05 September 2010 Pages: 263 - 266
Transport studies of MBE-grown InAs/GaSb superlattices
F. Szmulowicz
H.J. Haugan
W.C. Mitchel
OriginalPaper 05 September 2010 Pages: 267 - 270
Control of acceptor doping in MOCVD HgCdTe epilayers
P. Madejczyk
A. Piotrowski
A. Rogalski
OriginalPaper 05 September 2010 Pages: 271 - 276
High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes
M. Kopytko
K. Jóźwikowski
A. Rogalski
OriginalPaper 05 September 2010 Pages: 277 - 283
History of HgTe-based photodetectors in Poland
A. Rogalski
OriginalPaper 05 September 2010 Pages: 284 - 294
Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage
S. Sengupta
S.Y. Shah
S. Chakrabarti
OriginalPaper 05 September 2010 Pages: 295 - 299
Detection of terahertz and sub-terahertz wave radiation based on hot-carrier effect in narrow-gap Hg_1−xCd_xTe
V. Zabudsky
V. Dobrovolsky
N. Momot
OriginalPaper 05 September 2010 Pages: 300 - 304
Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg_1−xCd_xTe
S.G. Gasan-Zade
M.V. Strikha
G.A. Shepelskii
OriginalPaper 05 September 2010 Pages: 305 - 309
Nature of gallium deep centres in lead telluride based semiconductors
T.L. Petrenko
S.V. Plyatsko
OriginalPaper 05 September 2010 Pages: 310 - 317
Uncooled MWIR and LWIR photodetectors in Poland
J. Piotrowski
J. Pawluczyk
K. Kłos
OriginalPaper 05 September 2010 Pages: 318 - 327
Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy
I.I. Izhnin
I.A. Denisov
K.D. Mynbaev
OriginalPaper 05 September 2010 Pages: 328 - 331
Linear HgCdTe IR FPA 288×4 with bidirectional scanning
V.V. Vasilyev
A.V. Predein
A.L Aseev
OriginalPaper 05 September 2010 Pages: 332 - 337
The study of HgCdTe MBE-grown structure with ion milling
M.M. Pociask
OriginalPaper 05 September 2010 Pages: 338 - 341
Changes in 8–12 μm Cd_xHg_1−xTe photodiode arrays caused by fast neutron irradiation
I.O. Lysiuk
J.V. Gumenjuk-Sichevska
V.S. Varavin
OriginalPaper 05 September 2010 Pages: 342 - 344

Volume 18, Issue 3

Foreword

Field effect transistors for terahertz detection - silicon versus III–V material issue

Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides

320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter

Energy-band diagrams and capacity-voltage characteristics of Cd_xHg_1−xTe-based variband structures calculated with taking into account dependence of electron affinity on a composition

A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer

THz/sub-THz bolometer based on electron heating in a semiconductor waveguide

Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg_1−xCd_xTe at passivation by epitaxially grown in situ CdTe

Transport studies of MBE-grown InAs/GaSb superlattices

Control of acceptor doping in MOCVD HgCdTe epilayers

High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes

History of HgTe-based photodetectors in Poland

Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage

Detection of terahertz and sub-terahertz wave radiation based on hot-carrier effect in narrow-gap Hg_1−xCd_xTe

Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg_1−xCd_xTe

Nature of gallium deep centres in lead telluride based semiconductors

Uncooled MWIR and LWIR photodetectors in Poland

Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy

Linear HgCdTe IR FPA 288×4 with bidirectional scanning

The study of HgCdTe MBE-grown structure with ion milling

Changes in 8–12 μm Cd_xHg_1−xTe photodiode arrays caused by fast neutron irradiation

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