The incubation time for hole formation due to electromigration in Al and Al/Cu/Al thin films S. J. HorowitzI. A. Blech OriginalPaper Pages: 1171 - 1180
Study of NaLaS2 as an infrared window material T. J. IsaacsR. H. HopkinsW. E. Kramer OriginalPaper Pages: 1181 - 1189
Room temperature oxidation of lead-indium alloy films J. M. EldridgeD. W. DongK. L. Komarek OriginalPaper Pages: 1191 - 1205
Growth of polycrystalline silicon films on titanium and aluminum layers L. M. Ephrath OriginalPaper Pages: 1207 - 1227
Semiconductors used in optoelectronic devices — An overview Tong B. Tang OriginalPaper Pages: 1229 - 1247
First announcement1976 Electronic Materials Conference June 23–25, 1976 University of Utah Salt Lake City, Utah Announcement Pages: 1261 - 1261