InP-based AllnAs/GaAs0.51Sb0.49/GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications Changhyun YiTong-Ho KimApril S. Brown Regular Issue Paper Pages: 95 - 98
Donor-acceptor interactions in Al0.5In0.5P P. N. GrillotS. A. StockmanS. S. Yi Regular Issue Paper Pages: 99 - 107
Highly concentrated ozone gas supplied at an atmospheric pressure condition as a new oxidizing reagent for the formation of SiO2 thin film on Si Kunihiko KoikeShingo IchimuraKen Nakamura Regular Issue Paper Pages: 108 - 112
Point defects generated by direct-wafer bonding of silicon L. DózsaB. SzentpáliK. Hjort Regular Issue Paper Pages: 113 - 118
The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/n-Si schottky barrier diodes E. AyyildizÇ. Nuho LuA Türüt Regular Issue Paper Pages: 119 - 123
Characterization of ultrathin gate dielectrics formed by in-situ steam generation with nitrogen postprocessing A. KaramchetiV. H. C. WattC. Steinbrüchel Regular Issue Paper Pages: 124 - 128
Pulsed-magnetron-sputtered low-temperature indium tin oxide films for flat-panel display applications William J. LeeYean-Kuen FangC. C. Chen Regular Issue Paper Pages: 129 - 135
Joint shape, microstructure, and shear strength of lead-free solder joints with different component terminations Shawkret AhatHuang WeidongLuo Le Regular Issue Paper Pages: 136 - 141
Low-cycle fatigue behavior and mechanisms of a lead-free solder 96.5Sn/3.5Ag Chaosuan KanchanomaiYukio MiyashitaYoshiharu Mutoh Regular Issue Paper Pages: 142 - 151
Interfacial reactions in In-Sn/Ni couples and phase equilibria of the In-Sn-Ni system Ching-Yu HuangSinn-Wen Chen Regular Issue Paper Pages: 152 - 160
Determination of the eutectic structure in the Ag-Cu-Sn system Daniel LewisSarah AllenAdam Scotch Regular Issue Paper Pages: 161 - 167
