Studies of liquid-phase deposition-oxide/InP structure by liquid-phase deposition C. J. Huang Regular Issue Paper Pages: 1309 - 1315
The H2 plasma treatment of silver contacts: Impact on wire-bonding performance M. BielmannP. RuffieuxP. Gröning Regular Issue Paper Pages: 1316 - 1320
Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors M. WolterP. JavorkaM. Heuken Regular Issue Paper Pages: 1321 - 1324
Photonic effects during low-temperature ultraviolet-assisted oxidation of SiGe V. CraciunR. K. SinghIan W. Boyd Regular Issue Paper Pages: 1325 - 1329
Schottky enhancement of contacts to n-(In0.52Al0.48)As using PdAl as a metallization D. IngerlyC. -F. LinY. A. Chang Regular Issue Paper Pages: 1330 - 1336
Vapor pressures of the adducts formed during AlGaN organometallic vapor-phase epitaxy J. Randall Creighton Regular Issue Paper Pages: 1337 - 1340
Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition Shyh-Fann TingYean-Kuen FangJyh-Jier Ho Regular Issue Paper Pages: 1341 - 1346
Analyses of the practical adhesion strengths of the metal/polymer interfaces in electronic packaging Jin YuJ. Y. SongI. S. Park Regular Issue Paper Pages: 1347 - 1352
Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation C. VirojanadaraP. -A. GlansL. D. Madsen Regular Issue Paper Pages: 1353 - 1356
Anisotropic and selective grain growth during ohmic contact formation Qianghua XiePeter FejesEllen Lan Regular Issue Paper Pages: 1357 - 1361
The Cu/n-GaAs schottky barrier diodes prepared by anodization process Mehmet BiberAbdulmecit Türüt Regular Issue Paper Pages: 1362 - 1368