1. Characterization of the CH₄/H₂/Ar high density plasma etching process for HgCdTe

   • C. R. Eddy Jr.
   • D. Leonhardt
   • J. E. Butler

   Regular Issue Paper Pages: 347 - 354

2. Fabrication and characterization of GaSb based thermophotovoltaic cells using Zn diffusion from a doped spin-on glass source

   • S. Dakshinamurthy
   • S. Shetty
   • M. Freeman

   Regular Issue Paper Pages: 355 - 359

3. Photoreflectance study of Au-schottky contacts on n-GaN

   • Wei Liu
   • Ming-Fu Li
   • Koh Matsumoto

   Regular Issue Paper Pages: 360 - 363

4. Bromine ion-beam-assisted etching of III–V semiconductors

   • W. D. Goodhue
   • Y. Royter
   • C. G. Fonstad

   Regular Issue Paper Pages: 364 - 368

5. Effects of post-annealing by the rapid thermal process on the characteristics of MOCVD-Cu/TiN/Si structures

   • Youn Tae Kim
   • Chi-Hoon Jun
   • Dae Yong Kim

   Regular Issue Paper Pages: 369 - 371

6. Crystallographic defects in thermally oxidized wafer bonded silicon on insulator (SOI) substrates

   • Luis Felipe Giles
   • Yasuo Kunii

   Regular Issue Paper Pages: 372 - 376

7. Correlation between reliability and oxidation temperature for ultra-dry ultrathin silicon oxide films

   • Hiroshi Yamada

   Regular Issue Paper Pages: 377 - 384

8. Damage formation during 1.0 MeV Si self-implantation at low temperatures

   • M. B. Huang
   • I. V. Mitchell

   Regular Issue Paper Pages: 385 - 389

9. Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

   • Tsvetanka S. Zheleva
   • Scott A. Smith
   • Robert F. Davis

   Letters Pages: L5 - L8

10. Electrical properties of sputtered (Ba, Sr)TiO₃ thin films prepared by two-step deposition method

    • Byoung Taek Lee
    • Wan Don Kim
    • Moon Yong Lee

    Letters Pages: L9 - L12