Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe C. R. Eddy Jr.D. LeonhardtJ. E. Butler Regular Issue Paper Pages: 347 - 354
Fabrication and characterization of GaSb based thermophotovoltaic cells using Zn diffusion from a doped spin-on glass source S. DakshinamurthyS. ShettyM. Freeman Regular Issue Paper Pages: 355 - 359
Photoreflectance study of Au-schottky contacts on n-GaN Wei LiuMing-Fu LiKoh Matsumoto Regular Issue Paper Pages: 360 - 363
Bromine ion-beam-assisted etching of III–V semiconductors W. D. GoodhueY. RoyterC. G. Fonstad Regular Issue Paper Pages: 364 - 368
Effects of post-annealing by the rapid thermal process on the characteristics of MOCVD-Cu/TiN/Si structures Youn Tae KimChi-Hoon JunDae Yong Kim Regular Issue Paper Pages: 369 - 371
Crystallographic defects in thermally oxidized wafer bonded silicon on insulator (SOI) substrates Luis Felipe GilesYasuo Kunii Regular Issue Paper Pages: 372 - 376
Correlation between reliability and oxidation temperature for ultra-dry ultrathin silicon oxide films Hiroshi Yamada Regular Issue Paper Pages: 377 - 384
Damage formation during 1.0 MeV Si self-implantation at low temperatures M. B. HuangI. V. Mitchell Regular Issue Paper Pages: 385 - 389
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films Tsvetanka S. ZhelevaScott A. SmithRobert F. Davis Letters Pages: L5 - L8
Electrical properties of sputtered (Ba, Sr)TiO3 thin films prepared by two-step deposition method Byoung Taek LeeWan Don KimMoon Yong Lee Letters Pages: L9 - L12