1. Strain relaxation mechanisms in Si_1−xGe_x layers grown by solid-phase epitaxy: Influence of the layer composition and growth temperature

   • A. Rodríguez
   • T. Rodríguez
   • C. Ballesteros

   Regular Issue Paper Pages: 77 - 82

2. Passivation of the facets of 980 nm GaAs pump lasers by a pulsed UV laser-assisted technique

   • S. Kerboeuf
   • M. Bettiati
   • E. Martin

   Regular Issue Paper Pages: 83 - 90

3. Transient behavior of Hg_1−xCd_xTe film growth on (111)B CdTe substrates by chemical vapor transport

   • Yu-Ru Ge
   • Heribert Wiedemeier

   Regular Issue Paper Pages: 91 - 97

4. Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si_1−xGe_x for MOS applications

   • L. K. Bera
   • S. K. Ray
   • C. K. Maiti

   Regular Issue Paper Pages: 98 - 104

5. Interfacial reactions between liquid indium and nickel substrate

   • Y. H. Tseng
   • M. S. Yeh
   • T. H. Chuang

   Regular Issue Paper Pages: 105 - 108

6. SIMS analysis of nitrided oxides grown on 4H-SiC

   • P. Tanner
   • S. Dimitrijev
   • H. B. Harrison

   Regular Issue Paper Pages: 109 - 111

7. The structural changes in CdS-CdTe thin films due to annealing

   • K. D. Rogers
   • J. D. Painter
   • M. Healy

   Regular Issue Paper Pages: 112 - 117

8. New plasma chemistries for etching III–V compound semiconductors: Bl₃ and BBr₃

   • Takeshi Maeda
   • Hyun Cho
   • S. J. Pearton

   Regular Issue Paper Pages: 118 - 123

9. Impurity incorporation and the surface morphology of MOVPE grown GaAs

   • Jiang Li
   • T. F. Kuech

   Regular Issue Paper Pages: 124 - 133