Strain relaxation mechanisms in Si1−xGex layers grown by solid-phase epitaxy: Influence of the layer composition and growth temperature A. RodríguezT. RodríguezC. Ballesteros Regular Issue Paper Pages: 77 - 82
Passivation of the facets of 980 nm GaAs pump lasers by a pulsed UV laser-assisted technique S. KerboeufM. BettiatiE. Martin Regular Issue Paper Pages: 83 - 90
Transient behavior of Hg1−xCdxTe film growth on (111)B CdTe substrates by chemical vapor transport Yu-Ru GeHeribert Wiedemeier Regular Issue Paper Pages: 91 - 97
Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1−xGex for MOS applications L. K. BeraS. K. RayC. K. Maiti Regular Issue Paper Pages: 98 - 104
Interfacial reactions between liquid indium and nickel substrate Y. H. TsengM. S. YehT. H. Chuang Regular Issue Paper Pages: 105 - 108
SIMS analysis of nitrided oxides grown on 4H-SiC P. TannerS. DimitrijevH. B. Harrison Regular Issue Paper Pages: 109 - 111
The structural changes in CdS-CdTe thin films due to annealing K. D. RogersJ. D. PainterM. Healy Regular Issue Paper Pages: 112 - 117
New plasma chemistries for etching III–V compound semiconductors: Bl3 and BBr3 Takeshi MaedaHyun ChoS. J. Pearton Regular Issue Paper Pages: 118 - 123
Impurity incorporation and the surface morphology of MOVPE grown GaAs Jiang LiT. F. Kuech Regular Issue Paper Pages: 124 - 133