1. Process-induced stress and microcrack nucleation in GaAs wafers

   • Allan Ward III
   • Robert W. Hendricks

   Regular Issue Paper Pages: 821 - 825

2. Symptoms of stress-induced gain degradation in power MESFETs

   • Allan Ward III
   • Robert W. Hendricks

   Regular Issue Paper Pages: 826 - 828

3. Very low resistance ohmic contacts to n-GaN

   • Hwe Jae Lee
   • Soon Jae Yu
   • S. J. Noh

   Regular Issue Paper Pages: 829 - 832

4. Boron implantation and epitaxial regrowth studies of 6H SiC

   • N. Nordell
   • A. Schöner
   • E. Olsson

   Regular Issue Paper Pages: 833 - 837

5. Near-interface trapped charge induced by Fowler-Nordheim injection in hydrogen or argon annealed MOS capacitors

   • Hong Lin
   • M. E. Zvanut

   Regular Issue Paper Pages: 838 - 841

6. Phase equilibria of the Si-Ge-Ti system relevant to the reactions between SiGe alloys and Ti

   • T. A. Jain
   • C. R. Kao

   Regular Issue Paper Pages: 842 - 847

7. Model of the epitaxial growth of SiC-polytypes under surface-stabilized conditons

   • J. Furthmüller
   • P. Käckell
   • W. Richter

   Regular Issue Paper Pages: 848 - 852

8. Influence of water absorption by silicate glass on the strains in passivated Al conductor lines

   • W. -M. Kuschke
   • H. -D. Carstanjen
   • E. Arzt

   Regular Issue Paper Pages: 853 - 857

9. Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate

   • D. K. Sengupta
   • M. B. Weisman
   • W. I. Wang

   Regular Issue Paper Pages: 858 - 865

10. Effect of bismuth on the isothermal fatigue properties of Sn-3.5mass%Ag solder alloy

    • Yoshiharu Kariya
    • Masahisa Otsuka

    Regular Issue Paper Pages: 866 - 870

11. Barrier height determination for n-type 4H-SiC schottky contacts made using various metals

    • R. Yakimova
    • C. Hemmingsson
    • E. Janzén

    Regular Issue Paper Pages: 871 - 875

12. Structural, electrical and optical properties of zinc oxide produced by oxidation of zinc thin films

    • H. Kashani

    Regular Issue Paper Pages: 876 - 882

13. Evaluation of InP:Fe parameters by measurement of two wave mixing photorefractive and absorptive gain

    • M. Chauvet
    • G. J. Salamo
    • G. Bryant

    Regular Issue Paper Pages: 883 - 890

14. Transient behavior of Hg_1−xCd_xTe film growth on 3° off-(100) CdTe substrates by chemical vapor transport

    • Yu-Ru Ge
    • Heribert Wiedemeier

    Regular Issue Paper Pages: 891 - 899

15. Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion

    • R. M. Sieg
    • S. A. Ringel
    • R. N. Sacks

    Regular Issue Paper Pages: 900 - 907

16. Low-field bulk defect generation during uniform carrier injection into the gate insulator of insulated gate field effect transistors at various temperatures

    • H. S. Kim
    • C. K. Williams
    • A. Reisman

    Regular Issue Paper Pages: 908 - 914

17. High selectivity plasma etching of InN over GaN

    • Hyun Cho
    • J. Hong
    • J. Han

    Regular Issue Paper Pages: 915 - 917

18. Structural, optical and electronic properties of oxidized AIN thin films at different temperatures

    • Enam Ahmed Chowdhury
    • M. Dashiell
    • Yuan Chen

    Regular Issue Paper Pages: 918 - 922

19. Grain nucleation and texture analysis of electroless copper deposition on a palladium seed layer

    • Brian Johnson
    • Ron Amster
    • Linda Vanasupa

    Regular Issue Paper Pages: 923 - 927

20. Defects in optoelectronic materials due to phosphorus-containing underlayer

    • W. H. Cheng
    • C. H. Chen
    • K. C. Hsieh

    Letter Pages: L47 - L50

21. Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

    • D. Xu
    • T. Enoki
    • Y. Ishii

    Letter Pages: L51 - L53