Process-induced stress and microcrack nucleation in GaAs wafers Allan Ward IIIRobert W. Hendricks Regular Issue Paper Pages: 821 - 825
Symptoms of stress-induced gain degradation in power MESFETs Allan Ward IIIRobert W. Hendricks Regular Issue Paper Pages: 826 - 828
Very low resistance ohmic contacts to n-GaN Hwe Jae LeeSoon Jae YuS. J. Noh Regular Issue Paper Pages: 829 - 832
Boron implantation and epitaxial regrowth studies of 6H SiC N. NordellA. SchönerE. Olsson Regular Issue Paper Pages: 833 - 837
Near-interface trapped charge induced by Fowler-Nordheim injection in hydrogen or argon annealed MOS capacitors Hong LinM. E. Zvanut Regular Issue Paper Pages: 838 - 841
Phase equilibria of the Si-Ge-Ti system relevant to the reactions between SiGe alloys and Ti T. A. JainC. R. Kao Regular Issue Paper Pages: 842 - 847
Model of the epitaxial growth of SiC-polytypes under surface-stabilized conditons J. FurthmüllerP. KäckellW. Richter Regular Issue Paper Pages: 848 - 852
Influence of water absorption by silicate glass on the strains in passivated Al conductor lines W. -M. KuschkeH. -D. CarstanjenE. Arzt Regular Issue Paper Pages: 853 - 857
Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate D. K. SenguptaM. B. WeismanW. I. Wang Regular Issue Paper Pages: 858 - 865
Effect of bismuth on the isothermal fatigue properties of Sn-3.5mass%Ag solder alloy Yoshiharu KariyaMasahisa Otsuka Regular Issue Paper Pages: 866 - 870
Barrier height determination for n-type 4H-SiC schottky contacts made using various metals R. YakimovaC. HemmingssonE. Janzén Regular Issue Paper Pages: 871 - 875
Structural, electrical and optical properties of zinc oxide produced by oxidation of zinc thin films H. Kashani Regular Issue Paper Pages: 876 - 882
Evaluation of InP:Fe parameters by measurement of two wave mixing photorefractive and absorptive gain M. ChauvetG. J. SalamoG. Bryant Regular Issue Paper Pages: 883 - 890
Transient behavior of Hg1−xCdxTe film growth on 3° off-(100) CdTe substrates by chemical vapor transport Yu-Ru GeHeribert Wiedemeier Regular Issue Paper Pages: 891 - 899
Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion R. M. SiegS. A. RingelR. N. Sacks Regular Issue Paper Pages: 900 - 907
Low-field bulk defect generation during uniform carrier injection into the gate insulator of insulated gate field effect transistors at various temperatures H. S. KimC. K. WilliamsA. Reisman Regular Issue Paper Pages: 908 - 914
High selectivity plasma etching of InN over GaN Hyun ChoJ. HongJ. Han Regular Issue Paper Pages: 915 - 917
Structural, optical and electronic properties of oxidized AIN thin films at different temperatures Enam Ahmed ChowdhuryM. DashiellYuan Chen Regular Issue Paper Pages: 918 - 922
Grain nucleation and texture analysis of electroless copper deposition on a palladium seed layer Brian JohnsonRon AmsterLinda Vanasupa Regular Issue Paper Pages: 923 - 927
Defects in optoelectronic materials due to phosphorus-containing underlayer W. H. ChengC. H. ChenK. C. Hsieh Letter Pages: L47 - L50
Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication D. XuT. EnokiY. Ishii Letter Pages: L51 - L53
