Role of interfacial-charge in the growth of GaN on α-SiC Shang Yuan RenJohn D. Dow OriginalPaper Pages: 341 - 346
InAsSb/InTISb superlattice: A proposed heterostructure for long wavelength infrared detectors S. IyerJ. LiK.K. Bajaj OriginalPaper Pages: 347 - 349
Deposition of tantalum oxide films by dual spectral source assisted metalorganic chemical vapor deposition (MOCVD) Y. ChenR. SinghJ. Narayan OriginalPaper Pages: 350 - 354
Chemical beam epitaxial growth of inp using EDMIn and BPE C. W. KimL. P. SadwickG. B. Stringfellow OriginalPaper Pages: 355 - 360
Effects of trimethylindium on the purity of In0.5Al0.5P and In0.5Al0.5as epilayers grown by metalorganic chemical vapor deposition J. C. ChenZ. C. HuangRavi Kanjolia OriginalPaper Pages: 361 - 365
Characterization of organic thin films for OLEDs using spectroscopic ellipsometry Francis G. CeliiTracy B. HartonO.Faye Phillips OriginalPaper Pages: 366 - 371
Defect state assisted tunneling in intermediate temperature molecular beam epitaxy grown GaAs A. E. YoutzB. NabetF. Castro OriginalPaper Pages: 372 - 375
Effects of aluminum sputtering process parameters on via step coverage in micro-electronic device manufacturing G. DepintoS. DunniganB. Mishra OriginalPaper Pages: 376 - 382
Scanning tunneling potentiometry study of electron reflectivity of a single grain boundary in thin gold films M. A. SchneiderM. WenderothR. G. Ulbrich OriginalPaper Pages: 383 - 386
Influence of AIN protective film thickness on the hardness and electrophotographic properties of organic photoconductors X. S. MiaoY. C. ChanD. S. Chiu OriginalPaper Pages: 387 - 390
A comparison of the critical thickness for MBE grown Lt-GaAs determined by In-Situ ellipsometry and transmission electron microscopy K. G. EyinkM. A. CapanoB. G. Streetman OriginalPaper Pages: 391 - 396
Study of amorphous Ta2O5 thin films by DC magnetron reactive sputtering K. ChenM. NielsenT. -M. Lu OriginalPaper Pages: 397 - 401
Chemical vapor deposition and characterization of amorphous teflon fluoropolymerthin films R. SharangpaniR. SinghK. Ivey OriginalPaper Pages: 402 - 409
InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier Chihiro J. UchiboriY. OhtaniMasanori Murakami OriginalPaper Pages: 410 - 414