Growth and optical properties of strained (AIP)n (GaP)n short-period superlattices K. ShiraishiJ. KitamuraH. Kukimoto OriginalPaper Pages: 1801 - 1805
Patterning of transparent conducting oxide thin films by wet etching for a-Si:H TFT-LCDs Je-Hsiung LanJerzy KanickiTieer Gu OriginalPaper Pages: 1806 - 1817
Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier Chun-Yi ChaiJung-A HuangHuang-Chung Cheng OriginalPaper Pages: 1818 - 1822
Cd and Te-based ohmic contact materials to p-Type ZnSe K. HashimotoY. KoideMasanori Murakami OriginalPaper Pages: 1823 - 1831
Capacitance behavior of GaAs-MIS structures with low-temperature grown GaAs dielectric J. K. LuoD. WestwoodD. V. Morgan OriginalPaper Pages: 1832 - 1836
Analysis of the infrared transmission data of hydrogenated amorphous silicon film fabricated by high rate PECVD W. HuFlorence Y. M. ChanY. W. Lam OriginalPaper Pages: 1837 - 1840
Dislocation-free undoped semi-insulating GaAs epilayers prepared by chloride chemical vapor deposition and successive wafer annealing A. NodaK. KohiroO. Oda OriginalPaper Pages: 1841 - 1844
Influence of boron doping on the properties of amorphous and microcrystalline SiC films prepared using ECR-CVD S. F. YoonR. JiJ. Ahn OriginalPaper Pages: 1845 - 1850
Characterization of closed space vapor transport GaP epitaxial layers J. Mimila-AkroyoJ. DiazJ. C. Bourgoin OriginalPaper Pages: 1851 - 1857