1. Preparation and gas-sensing properties of α-Fe₂O₃ thin films

   • C. C. Chai
   • J. Peng
   • B. P. Yan

   OriginalPaper Pages: 799 - 804

2. Process parameter dependence of impurity-free interdiffusion in GaAs/Al_xGa_1−xAs and In_xGa_1−yAs/GaAs multiple quantum wells

   • S. Bürkner
   • M. Maier
   • J. D. Ralston

   OriginalPaper Pages: 805 - 812

3. Investigations on Au, Ag, and Al schottky diodes on liquid encapsulated czochralski grown n-GaAs〈100〉

   • S. Arulkumaran
   • J. Arokiaraj
   • P. Ramasamy

   OriginalPaper Pages: 813 - 817

4. Microstructures of InAs_1−xSb_x (x = 0.07–0.14) alloys and strained-layer superlattices

   • D. M. Follstaedt
   • R. M. Biefeld
   • K. C. Baucom

   OriginalPaper Pages: 819 - 825

5. Chemical beam epitaxy and laser-modified chemical beam epitaxy of InGaAs using tris-dimethylaminoarsenic

   • H. K. Dong
   • N. Y. Li
   • C. W. Tu

   OriginalPaper Pages: 827 - 832

6. Liquid phase epitaxy growth of InGaAs with rare-earth gettering: Characterization and deep level transient spectroscopy studies

   • A. Kumar
   • D. Pal
   • D. N. Bose

   OriginalPaper Pages: 833 - 840

7. Copper-matrix molybdenum particle composites made from copper coated molybdenum powder

   • Pay Yih
   • D. D. L. Chung

   OriginalPaper Pages: 841 - 851

8. Electrical properties of inhomogeneous SiC MIS structures

   • M. Karlsteen
   • A. Baranzahi
   • I. Lundström

   OriginalPaper Pages: 853 - 861

9. Low-temperature processing of shallow junctions using epitaxial and polycrystalline CoSi₂

   • Erin C. Jones
   • Nathan W. Cheung
   • David B. Fraser

   OriginalPaper Pages: 863 - 873

10. Low temperature heteroepitaxial growth of Si_1−xGe_xon-Si by photo-enhanced ultra high vacuum chemical vapor deposition using Si₂H₆ and Ge₂H₆

    • C. Li
    • S. John
    • S. Banerjee

    OriginalPaper Pages: 875 - 884

11. Microstructure and domain configurations in ferroelectric PbTiO₃ and Pb(Zr,Ti)O₃ thin fims

    • Jane G. Zhu
    • M. M. Al-Jassim
    • Maria Huffman

    OriginalPaper Pages: 885 - 891

12. Electronic characterization of heterojunctions by surface potential monitoring

    • L. Kronik
    • M. Leibovitch
    • Yoram Shapira

    OriginalPaper Pages: 893 - 901

13. T(x) phase diagram of the Cu₂Se-Al₂Se₃ system

    • B. V. Korzoun
    • L. A. Makovetskaya
    • A. P. Chernyakova

    OriginalPaper Pages: 903 - 906

14. DX-center energy level dependence on silicon doping concentration in Al_0.3Ga_0.7As

    • G. Medeiros-Ribeiro
    • A. G. de Oliveira
    • D. A. W. Soares

    OriginalPaper Pages: 907 - 912

15. LT-GaAs with high breakdown strength at low temperature for power MISFET applications

    • K. -M. Lipka
    • B. Splingart
    • E. Kohn

    OriginalPaper Pages: 913 - 916