Electron beam induced current investigations of active electrical defects in silicon due to reactive ion etching and reactive ion beam etching processes G. Jäger-WaldauH. -U. HabermeierE. Bucher OriginalPaper Pages: 363 - 367
Damage and strain in pseudomorphic vs relaxed GexSi1−x layers on Si(100) generated by Si ion irradiation D. Y. C. LieA. VantommeB. Holländer OriginalPaper Pages: 369 - 373
Mode I fracture toughness testing of eutectic Sn-Pb solder joints Ronald E. PrattEric I. StromswoldDavid J. Quesnel OriginalPaper Pages: 375 - 381
Copper chemical vapor deposition from Cu(hexafluoroacetylacetonate)trimethylvinylsilane Jung-Chao ChiouYin-Jang ChenMao-Chieh Chen OriginalPaper Pages: 383 - 390
P-type doping of GaAs by carbon implantation H. JiangR. G. EllimanJ. S. Williams OriginalPaper Pages: 391 - 396
Pd-Ge contact to n-GaAs with the TiW diffusion barrier Wen Chang HuangTan Fu LeiChung Len Lee OriginalPaper Pages: 397 - 401
Electrical properties of He+ ion-implanted GaInP S. -L. FuT. P. ChinP. M. Asbeck OriginalPaper Pages: 403 - 407
The effect of surface species on the photoluminescence of porous silicon K. -H. LiC. TsaiJ. M. White OriginalPaper Pages: 409 - 412
Titanium silicide/germanide formation on submicron features for high mobility SiGe channel field effect transistors P. D. AgnelloV. P. KesanJ. A. Ott OriginalPaper Pages: 413 - 421
Origin of optical anisotropy in strained InxGa1−xAs/InP and InyAl1−yAs/InP heterostructures B. R. BennettJ. A. del AlamoD. E. Aspnes OriginalPaper Pages: 423 - 429