1. Foreword

   • Anthony J. SpringThorpe

   EditorialNotes Pages: 135 - 135

2. Growth of GaAs_1−xP_x/GaAs and InAs_xP_1−x/InP strained quantum wells for optoelectronic devices by gas-source molecular beam epitaxy

   • H. Q. Hou
   • C. W. Tu

   OriginalPaper Pages: 137 - 141

3. Ultra-low temperature OMVPE of InAs and InAsBi

   • K. Y. Ma
   • Z. M. Fang
   • G. B. Stringfellow

   OriginalPaper Pages: 143 - 148

4. In-situ plasma cleaning of stainless steel III-V MOCVD growth systems

   • S. Li
   • G. S. Tompa
   • S. Smith

   OriginalPaper Pages: 149 - 156

5. Wide-gap semiconductor InGaN and InGaAln grown by MOVPE

   • T. Matsuoka
   • N. Yoshimoto
   • A. Katsui

   OriginalPaper Pages: 157 - 163

6. Low pressure MOCVD growth of buried heterostructure laser wafers using high quality semi-insulating InP

   • D. G. Knight
   • B. Emmerstorfer
   • A. J. Springthorpe

   OriginalPaper Pages: 165 - 171

7. Effects of S, Si, or Fe dopants on the diffusion of Zn in InP during MOCVD

   • C. Blaauw
   • B. Emmerstorfer
   • A. J. Springthorpe

   OriginalPaper Pages: 173 - 179

8. MBE growth and characteristics of periodic index separate confinement heterostructure InGaAs quantum-well lasers

   • M. Hong
   • M. C. Wu
   • M. A. Chin

   OriginalPaper Pages: 181 - 185

9. Be doped GaAs grown by migration enhanced epitaxy at low substrate temperature

   • K. Zhang
   • S. S. Bose
   • N. Pan

   OriginalPaper Pages: 187 - 193

10. GaInP and AlInP grown by elemental source molecular beam epitaxy

    • J. A. Varriano
    • M. W. Koch
    • G. W. Wicks

    OriginalPaper Pages: 195 - 198

11. Optimization of buffer layers for AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors by atmospheric pressure metalorganic chemical vapor deposition

    • N. Pan
    • G. S. Jackson
    • S. K. Brierley

    OriginalPaper Pages: 199 - 203

12. Conducting polyheterocycle composites based on porous hosts

    • J. S. Park
    • E. Ruckenstein

    OriginalPaper Pages: 205 - 215

13. Electrical behavior of ZrO₂-MgO-Y₂O₃ solid electrolyte

    • Long Wu
    • Chen-Chen G. Wu
    • Yi-Bin Chang

    OriginalPaper Pages: 217 - 222

14. Thermal stability of Si/Ge_n/Si heterostructures by photoreflectance

    • Kumiko Asami
    • Kazushi Miki
    • Shun-Ichi Gonda

    OriginalPaper Pages: 223 - 226

15. Effect of grain microstructure on P diffusion in polycrystalline-on-single crystal silicon systems

    • S. Batra
    • K. H. Park
    • B. J. Mulvaney

    OriginalPaper Pages: 227 - 231

16. Investigations on the interface abruptness in CBE-grown InGaAs/InP QW structures

    • A. Antolini
    • P. J. Bradley
    • C. Rigo

    OriginalPaper Pages: 233 - 238

17. Fabrication and properties of multilayer Sr_0.7Ba_0.3TiO₃ ceramic varistors

    • Liqin Zhou
    • Zhihua Jiang
    • Changkui Yu

    OriginalPaper Pages: 239 - 241

18. Ohmic contacts ton-type In_0.5Ga_0.5P

    • F. Ren
    • J. M. Kuo
    • J. R. Lothian

    OriginalPaper Pages: 243 - 247