Growth of GaAs1−xPx/GaAs and InAsxP1−x/InP strained quantum wells for optoelectronic devices by gas-source molecular beam epitaxy H. Q. HouC. W. Tu OriginalPaper Pages: 137 - 141
Ultra-low temperature OMVPE of InAs and InAsBi K. Y. MaZ. M. FangG. B. Stringfellow OriginalPaper Pages: 143 - 148
In-situ plasma cleaning of stainless steel III-V MOCVD growth systems S. LiG. S. TompaS. Smith OriginalPaper Pages: 149 - 156
Wide-gap semiconductor InGaN and InGaAln grown by MOVPE T. MatsuokaN. YoshimotoA. Katsui OriginalPaper Pages: 157 - 163
Low pressure MOCVD growth of buried heterostructure laser wafers using high quality semi-insulating InP D. G. KnightB. EmmerstorferA. J. Springthorpe OriginalPaper Pages: 165 - 171
Effects of S, Si, or Fe dopants on the diffusion of Zn in InP during MOCVD C. BlaauwB. EmmerstorferA. J. Springthorpe OriginalPaper Pages: 173 - 179
MBE growth and characteristics of periodic index separate confinement heterostructure InGaAs quantum-well lasers M. HongM. C. WuM. A. Chin OriginalPaper Pages: 181 - 185
Be doped GaAs grown by migration enhanced epitaxy at low substrate temperature K. ZhangS. S. BoseN. Pan OriginalPaper Pages: 187 - 193
GaInP and AlInP grown by elemental source molecular beam epitaxy J. A. VarrianoM. W. KochG. W. Wicks OriginalPaper Pages: 195 - 198
Optimization of buffer layers for AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors by atmospheric pressure metalorganic chemical vapor deposition N. PanG. S. JacksonS. K. Brierley OriginalPaper Pages: 199 - 203
Conducting polyheterocycle composites based on porous hosts J. S. ParkE. Ruckenstein OriginalPaper Pages: 205 - 215
Electrical behavior of ZrO2-MgO-Y2O3 solid electrolyte Long WuChen-Chen G. WuYi-Bin Chang OriginalPaper Pages: 217 - 222
Thermal stability of Si/Gen/Si heterostructures by photoreflectance Kumiko AsamiKazushi MikiShun-Ichi Gonda OriginalPaper Pages: 223 - 226
Effect of grain microstructure on P diffusion in polycrystalline-on-single crystal silicon systems S. BatraK. H. ParkB. J. Mulvaney OriginalPaper Pages: 227 - 231
Investigations on the interface abruptness in CBE-grown InGaAs/InP QW structures A. AntoliniP. J. BradleyC. Rigo OriginalPaper Pages: 233 - 238
Fabrication and properties of multilayer Sr0.7Ba0.3TiO3 ceramic varistors Liqin ZhouZhihua JiangChangkui Yu OriginalPaper Pages: 239 - 241