Carbon reactions in reactive ion etched silicon J. L. BentonJ. MichelR. A. Gottscho OriginalPaper Pages: 643 - 647
Diffusion induced disorder in AlAs-GaAs superlattice by transition elements H. P. HoI. HarrisonM. Henini OriginalPaper Pages: 649 - 652
Investigation of pyroelectric characteristics of 0.8 Pb (Zn1/3Nb2/3)O3 - 0.1 Pb TiO3 - 0.1 BaTiO3 ceramics with special reference to uncooled infrared detection K. K. Deb OriginalPaper Pages: 653 - 658
Changes in the opto-electronic properties of CuInSe2 following ion implantation R. D. TomlinsonA. E. HillM. V. Yakushev OriginalPaper Pages: 659 - 663
Mechanical integrity of polysilicon films exposed to hydrofluoric acid solutions James A. WalkerKaigham J. GabrielMehran Mehregany OriginalPaper Pages: 665 - 670
Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition M. H. KimS. S. BoseG. E. Stillman OriginalPaper Pages: 671 - 679
A technique for calibrating an electron-beam evaporator x-ray source Robert J. Kinzig OriginalPaper Pages: 681 - 686
Photoluminescence studies on InGaAlP layers grown by low-pressure metalorganic chemical vapor deposition S. NaritsukaY. NishikawaY. Kokubun OriginalPaper Pages: 687 - 690
DX centers in AlxGa1-xAs bulk alloy, AlAs/GaAs ordered, and disordered superlattices Makoto KasuRangaiya RaoAkio Sasaki OriginalPaper Pages: 691 - 693
Selective photochemical etching by enhanced carrier recombination: Process control using Raman spectroscopy C. I. H. AshbyD. R. Myers OriginalPaper Pages: 695 - 699