Determination of the liquidus lines and isotherms of the Hg-Zn-Te system by a modified direct observation method YI Gao ShaHeribert Wiedemeier OriginalPaper Pages: 217 - 221
Effect of radial growth rate variation on resonant tunneling diode current-Voltage characteristics E. T. KoenigC. I. HuangD. C. Reynolds OriginalPaper Pages: 223 - 225
A model for high temperature growth of CdTe by metal organic chemical vapor deposition N. AmirD. GorenY. Nemirovsky OriginalPaper Pages: 227 - 230
Zone melting recrystallization of polysilicon by a focused-lamp with unsymmetric trapezoidal power distribution Jin-Ho ChoiHo-Jun SongChoong-Ki Kim OriginalPaper Pages: 231 - 235
Growth and characterization of Ga2Te3 films by metalorganic molecular beam epitaxy N. TeraguchiF. KatoK. Takahashi OriginalPaper Pages: 247 - 250
A comparison of MOS gate structures formed by depositing polycrystalline silicon on thin oxides using conventional low pressure chemical vapor deposition and rapid thermal chemical vapor deposition XiaoWei RenMehmet C. OzturkEdward Niccolian OriginalPaper Pages: 251 - 259
Ultra-Shallow junctions in silicon using amorphous and polycrystalline silicon solid diffusion sources Keunhyung ParkShubneesh BatraGayle Lux OriginalPaper Pages: 261 - 265
Silicon on insulator material by Wafer Bonding Christine HarendtCharles E. HuntElisabeth Penteker OriginalPaper Pages: 267 - 277
Cleaning and passivation of the Si(100) surface by low temperature remote hydrogen plasma treatment for Si epitaxy T. HsuB. AnthonyC. Magee OriginalPaper Pages: 279 - 287