Investigation of the role of charged species in hot filament assisted CVD of diamond F. P. DotyW. A. Jesser OriginalPaper Pages: 121 - 126
Direct, mass-analyzed ion-beam and arc-discharge deposition of diamondlike films J-P. HirvonenJ. KoskinenM. Trkula OriginalPaper Pages: 127 - 132
Non-equilibrium thermodynamics and the vapor phase preparation of diamond for electronic applications Walter A. Yarbrough OriginalPaper Pages: 133 - 139
Growth of diamond films on si(100) with and without boron nitride buffer layer S. M. KanetkarG. MateraM. Paesler OriginalPaper Pages: 141 - 149
Materials study of silicon-on-lnsulator material by TEM E. P. KvamJ. WashburnP. M. Zavracky OriginalPaper Pages: 151 - 153
Defect formation in epitaxial crystal growth Jack WashburnEric P. KvamZuzanna Liliental-Weber OriginalPaper Pages: 155 - 161
Defects and defect reduction processing in semiconductor heterostructures S. SharanJ. Narayan OriginalPaper Pages: 163 - 167
Spatially resolved photoluminescence using spectral correlation W. A. BeckD. GillS. P. Svensson OriginalPaper Pages: 169 - 173
Phase relations in the system ln-CulnS2 M. L. FearheileyN. DietzC. Höpfner OriginalPaper Pages: 175 - 177
Structural characterizations of initial nucleation of gaas on si films grown by modulated molecular beam epitaxy Henry P. LeeXiaoming LiuZuzanna Liliental-Weber OriginalPaper Pages: 179 - 186
Monoethylarsine pyrolysis mechanisms—alone and with trimethylgallium S. H. LiC. A. LarsenG. B. Stringfellow OriginalPaper Pages: 187 - 195
Effects of growth interruption on the optical properties of AIGaAs/GaAs and GaAs/InGaAs quantum wells grown by atmospheric pressure organometallic chemical vapor deposition Daniel C. BertoletJung-Kuei HsuEmil S. Koteles OriginalPaper Pages: 197 - 201
Deep levels in Si-implanted and rapid thermal annealed semi-insulating gaAs Ho Sub LeeHoon Young ChoChi Yhou Hong OriginalPaper 12 July 2007 Pages: 203 - 206
Deep levels in bulk LEC single crystal IxGa1-xAs X. J. BaoT. E. SchlesingerS. Mahajan OriginalPaper Pages: 207 - 210
Arsenic-implanted thin film PECVD semi-insulating polysilicon (SIPOS) resistors P. H. OngS. S. AngP. V. Dressendorfer OriginalPaper Pages: 211 - 215