Protection of InP EPI-ready wafers by controlled oxide growth D. GalletM. GendryD. Lecrosnier OriginalPaper Pages: 963 - 965
MLEK crystal growth of (100) indium phosphide David F. BlissRobert M. HiltonJoseph A. Adamski OriginalPaper Pages: 967 - 971
Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP J. H. MarshS. A. BradshawR. W. Glew OriginalPaper Pages: 973 - 978
The growth of high quality InP/InGaAs/InGaAsP interfaces by CBE for SCH multi-quantum well lasers M. E. SherwinD. T. NicholsG. I. Haddad OriginalPaper Pages: 979 - 982
Systematic optical and x-ray study of In x Ga1−x As on InP J. P. EstreraW. M. DuncanE. A. Beam OriginalPaper Pages: 983 - 987
MBE growth and electrical behaviour of single and double Si δ-doped InGaAs-layers W. PassenbergH. G. BachJ. Böttcher OriginalPaper Pages: 989 - 991
Long wavelength quantum well lasers: Synopsis of the RACE “AQUA” project: MOVPE/MBE/GSMBE for InGaAsP/InP and InGaAlAs/InP high speed MQW DFB lasers Peter Speier OriginalPaper Pages: 993 - 999
Characteristics of Au/n-InP Schottky junctions formed on H2- and PH3-plasma treated surfaces Takashi SuginoHiroyuki YamamotoJunji Shirafuji OriginalPaper Pages: 1001 - 1006
Development of high quality InP bulk crystals O. OdaK. KainoshoT. Fukui OriginalPaper Pages: 1007 - 1011
Growth of low dislocation density InP single crystals by the phosphorus vapor controlled LEC method K. KohiroK. KainoshoO. Oda OriginalPaper Pages: 1013 - 1017
High-efficiency, thin-film InP concentrator solar cells M. W. WanlassT. J. CouttsG. S. Horner OriginalPaper Pages: 1019 - 1024
Semi-insulating InP: Fe regrowth by the hydride VPE technique aroundp-InP substrate laser mesas fabricated by reactive ion etching S. LourdudossS. NilssonB. Holmberg OriginalPaper Pages: 1025 - 1027
Fabrication of a GaAs-on-InP, four channel variable bandwidth optical receiver, opto-electronic integrated circuit (OEIC), using a seeded-mask technology P. J. O’sullivanD. A. AllanR. Young OriginalPaper Pages: 1029 - 1031
Selective growth of InP in the low pressure hydride VPE system R. BeccardA. DeheP. Speier OriginalPaper Pages: 1033 - 1036
Comparison of Zn and Mg incorporation in MOVPE InP/GaInAsP laser structures E. VeuhoffH. BaumeisterR. Treichler OriginalPaper Pages: 1037 - 1041
Influence of iron content on electrical characteristics and thermal stability of LEC indium phosphide R. Fornari OriginalPaper Pages: 1043 - 1048
Ultra-thin GaxIn1−xAs/InP (0≤x≤0.47) layer growth by chemical beam epitaxy Noriyuki YokouchiToshi K. UchidaKenichi Iga OriginalPaper Pages: 1049 - 1052
Effect of structural parameters on InGaAs/InAlAs 2DEG transport characteristics M. A. TischlerB. D. ParkerM. S. Goorsky OriginalPaper Pages: 1053 - 1057
A reliable fabrication technique for very low resistance ohmic contacts top-InGaAs using low energy Ar+ ion beam sputtering G. StareevA. Umbach OriginalPaper Pages: 1059 - 1063
Compensation mechanisms in nominally undoped semi-insulating InP and comparison with undoped InP grown under stoichiometry control G. HirtD. HofmannG. Müller OriginalPaper Pages: 1065 - 1068
Ohmic contacts to InP-based materials induced by means of rapid thermal low pressure (metallorganic) chemical vapor deposition technique A. Katz OriginalPaper Pages: 1069 - 1073
Orthorhombic distortion of mismatched In X Ga1−X As/InP heterostructures Brian R. BennettJesús A. Del Alamo OriginalPaper Pages: 1075 - 1079
Very high electron mobility In0.8Ga0.2As heterostructure grown by molecular beam epitaxy Munecazu TacanoYoshinobu SugiyamaYoshiki Ueno OriginalPaper Pages: 1081 - 1085
High purity InP grown by chemical beam epitaxy A. RudraJ. F. CarlinM. Ilegems OriginalPaper Pages: 1087 - 1090
Optical and electrical characterization ofn- andp-type Fe-doped InP F. MoselA. SeidlG. Müller OriginalPaper Pages: 1091 - 1094
Lattice dilation acrossn-InP-substrates and its influence on material properties of InP/InGaAsP- double-heterostructures A. KnauerR. StaskeR. Kittner OriginalPaper Pages: 1095 - 1098
In situ optical monitoring of OMVPE deposition of AlGaAs by laser reflectance H. SankurW. SouthwellR. Hall OriginalPaper Pages: 1099 - 1104
Low-temperature CVD TiN as a diffusion barrier between gold and silicon Joshua N. MusherRoy G. Gordon OriginalPaper Pages: 1105 - 1107
Growth and characterization of indium arsenide thin films D. L. PartinL. GreenC. M. Thrush OriginalPaper Pages: 1109 - 1115
Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wells R. P. SchneiderB. W. Wessels OriginalPaper Pages: 1117 - 1123
The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer R. M. FletcherC. P. KuoV. M. Robbins OriginalPaper Pages: 1125 - 1130