1. Germanium as a deep level in al_xga_{1− x}as grown by organometallic vapor phase epitaxy

   • R. T. Green
   • W. I. Lee

   OriginalPaper Pages: 583 - 587

2. Reaction mechanisms of tertiarybutylarsine on GaAs (001) surfaces and its relevance to atomic layer epitaxy and chemical beam epitaxy

   • B. Y. Maa
   • P. D. Dapkus

   OriginalPaper Pages: 589 - 593

3. Use of pt gate metallization to reduce gate leakage current in GaAs MESFETs

   • F. Ren
   • A. B. Emerson
   • J. Lothian

   OriginalPaper Pages: 595 - 598

4. Effects of cooling rate on mechanical properties of near-eutectic tin-lead solder joints

   • Z. Mei
   • J. W. Morris
   • T. S. E. Summers

   OriginalPaper Pages: 599 - 608

5. A model for the growth of cdte by metal organic chemical vapor deposition

   • Y. Nemirovsky
   • D. Goren
   • A. Ruzin

   OriginalPaper Pages: 609 - 613

6. Rutherford backscattering studies on high-energy Si-implanted InP

   • Sadanand M. Gulwadi
   • Ravi K. Nadella
   • Mulpuri V. Rao

   OriginalPaper Pages: 615 - 619

7. Ultraviolet photoluminescence from undoped and zn doped Al_xG_a1−xN with x between 0 and 0.75

   • H. G. Lee
   • M. Gershenzon
   • B. L. Goldenberg

   OriginalPaper Pages: 621 - 625

8. Post-irradiation formation of Si-SiO₂ interface states in a hydrogen atmosphere at room temperature

   • B. J. Mrstik

   OriginalPaper Pages: 627 - 633

9. Evaluation of binary and ternary melts for the low temperature liquid phase epitaxial growth of silicon

   • Soo Hong Lee
   • Martin A. Green

   OriginalPaper Pages: 635 - 641