Use of test structures and results of electrical tests for silicon-on-sapphire integrated circuit processes P. A. CrossleyW. E. Ham OriginalPaper Pages: 465 - 465
Use of test structures and results of electrical tests for silicon-on-sapphire integrated circuit processes P. A. CrossleyW. E. Ham OriginalPaper Pages: 465 - 483
Physical properties of the As2 (Se,Te)3 glasses (Review article) David D. Thornburg ReviewPaper Pages: 495 - 532
Annealing behavior of electrodeposited gold containing entrapments K. C. JoshiR. C. Sanwald OriginalPaper Pages: 533 - 552
Effect of Pb- and Te-saturation on carrier concentrations in impurity-doped PbTe A. J. Strauss OriginalPaper Pages: 553 - 569
Electroluminescent shockley diodes of GaAs and GaAsl−x, Px C. J. NueseJ. J. GannonC. R. Wronski OriginalPaper Pages: 571 - 599
The melt growth and doping of CdGeP2 J. D. WileyE. BuehlerJ. H. Wernick OriginalPaper Pages: 601 - 607
Novel garnet then film optical waveguides L. K. ShickC. D. BrandieM. A. Karr OriginalPaper Pages: 609 - 615