the properties of long wavelength strained layer superlattice lasers grown by MOVPE K. J. MonserratJ. N. Tothill OriginalPaper Pages: 475 - 480
Degradation of mercuric iodide crystals on aging P. SuryanarayanaH. N. Acharya OriginalPaper Pages: 481 - 485
Wafer-level correlations of EL2, dislocation density, and FET saturation current at various processing stages D. C. LookD. C. WaltersJ. S. Sizelove OriginalPaper Pages: 487 - 492
Characterization of a rapid thermal anneal TiNxOy/TiSi2 contact barrier V. Q. Ho OriginalPaper Pages: 493 - 499
OMVPE growth of p-AlGaAs/GaAs heterojunctions using diethylberyllium R. S. SillmonS. M. HuesP. E. Thompson OriginalPaper Pages: 501 - 504
Auto lattice matching effect for allnas grown by MBE at high substrate temperature M. AllovonJ. PrimotM. Quillec OriginalPaper Pages: 505 - 510
The behaviour of ZrB x (0 ≤x ≤ 2) thin films deposited on si substrate as a function of annealing treatment C. Y. TayI. R. HarrisS. J. Wright OriginalPaper Pages: 511 - 516
Structure and properties of Al-1%Si thin films on Si as a function of gas impurities during DC magnetron-sputtered deposition D. R. FrearA. N. CampbellR. E. Mikawa OriginalPaper Pages: 517 - 525
Electrical modelling of Ion- Damaged GaAs schottky barrier interfaces E. D. ColeS. SenL. C. Burton OriginalPaper Pages: 527 - 530
Effects of chemical and electrochemical etching on polycrystalline thin films of CuGaSe2 A. KisilevA. JakubowiczDavid Cahen OriginalPaper Pages: 531 - 536
Donor-like localization and activated conduction in compensatedn-Hg0.8Cd0.2Te R. D. S. YadavaA. V. R. Warrier OriginalPaper Pages: 537 - 541
An efficient technique for analyzing deep level transient spectroscopy data Peter D. DevriesA. Azim Khan OriginalPaper Pages: 543 - 547
The growth of low dislocation densityp-lnP single crystals E. M. MonbergP. M. BridenbaughR. L. Barns OriginalPaper Pages: 549 - 552
The relative stabilities of tungsten hexacarbonyl, silver neodecanoate some metal acetyl- and hexafluoroacetylacetonates and the thermal properties of the palladium(II) acetonates S. PostonA. Reisman OriginalPaper Pages: 553 - 560
Arsenic silicide formation by oxidation of arsenic implanted silicon D. HagmannW. EuenG. Metzger OriginalPaper Pages: 561 - 565